OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STD2N50
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
TYPICAL R
DS(on)
= 4.5
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
APPLICATION ORIENTED
CHARACTERIZATION
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
D SS
R
DS( on)
I
D
STD2N50
500 V
< 5.5
2 A
December 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
D S
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate-source Voltage
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
2
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
1.25
A
I
D M
(
)
Drain Current (pulsed)
8
A
P
tot
Total Dissipation at T
c
= 25
o
C
45
W
Derating Factor
0.36
W/
o
C
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
1
3
2
IPAK
TO-251
(Suffix "-1")
1
3
DPAK
TO-252
(Suffix "T4")
1/10
THERMAL DATA
R
thj-case
R
thj- amb
R
t hc- sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
2.78
100
1.5
275
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
2
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
D D
= 50 V)
20
mJ
E
AR
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
< 1%)
1.5
mJ
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
< 1%)
1.2
A
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
( BR) DSS
Drain-source
Breakdown Voltage
I
D
= 250
A V
GS
= 0
500
V
I
DS S
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
D S
= Max Rating
V
D S
= Max Rating x 0.8 T
c
= 125
o
C
25
250
A
A
I
GSS
Gate-body Leakage
Current (V
D S
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
D S
= V
GS
I
D
= 250
A
2
3
4
V
R
DS( on)
Static Drain-source On
Resistance
V
GS
= 10V I
D
= 1 A
4.5
5.5
I
D( on)
On State Drain Current
V
D S
> I
D( on)
x R
D S(on) max
V
GS
= 10 V
2
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
D S
> I
D( on)
x R
D S(on) max
I
D
= 1 A
0.65
1
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
D S
= 25 V f = 1 MHz V
GS
= 0
200
35
12
270
50
18
pF
pF
pF
STD2N50
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
D D
= 200 V I
D
= 1 A
R
G
= 50
V
GS
= 10 V
(see test circuit, figure 3)
35
85
50
120
ns
ns
(di/dt)
on
Turn-on Current Slope
V
D D
= 400 V I
D
= 2 A
R
G
= 50
V
GS
= 10 V
(see test circuit, figure 5)
28
A/
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
D D
= 400 V I
D
= 2 A V
GS
= 10 V
18
5
8
25
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Vof f)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
D D
= 400 V I
D
= 2 A
R
G
= 50
V
GS
= 10 V
(see test circuit, figure 5)
25
15
45
35
25
65
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
S D
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
2
8
A
A
V
S D
(
)
Forward On Voltage
I
SD
= 2 A V
GS
= 0
1.5
V
t
rr
Q
r r
I
R RM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 2 A di/dt = 100 A/
s
V
D D
= 100 V T
j
= 150
o
C
(see test circuit, figure 5)
330
2.5
15
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STD2N50
3/10
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STD2N50
4/10
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Cross-over Time
Turn-off Drain-source Voltage Slope
STD2N50
5/10
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