www.docs.chipfind.ru
1/11
June 2003
STD2NC45-1
STQ1NC45
N-CHANNEL 450V - 4.1
- 1.5 A IPAK / TO-92
SuperMESHTMPower MOSFET
s
TYPICAL R
DS
(on) = 4.1
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
GATE CHARGE MINIMIZED
s
NEW HIGH VOLTAGE BENCHMARK
DESCRIPTION
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established strip-
based PowerMESHTM layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmeshTM products.
APPLICATIONS
s
SWITCH MODE LOW POWER SUPPLIES
(SMPS)
s
LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS)
s
LOW POWER BATTERY CHARGERS
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
I
D
Pw
STD2NC45-1
STQ1NC45
450 V
450 V
< 4.5
< 4.5
1.5 A
0.5 A
30 W
3.1 W
SALES TYPE
MARKING
PACKAGE
PACKAGING
STD2NC45-1
D2NC45
IPAK
TUBE
STQ1NC45
Q1NC45
TO-92
BULK
STQ1NC45-AP
Q1NC45
TO-92
AMMOPAK
IPAK
3
2
1
TO-92
TO-92 (Ammopack)
INTERNAL SCHEMATIC DIAGRAM
STD2NC45-1, STQ1NC45
2/11
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
SD
0.5A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
STD2NC45-1
STQ1NC45
V
DS
Drain-source Voltage (V
GS
= 0)
450
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
450
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
1.5
0.5
A
I
D
Drain Current (continuos) at T
C
= 100C
0.95
0.315
A
I
DM
( )
Drain Current (pulsed)
6
2
A
P
TOT
Total Dissipation at T
C
= 25C
30
3.1
W
Derating Factor
0.24
0.025
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
3
V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-65 to 150
-65 to 150
C
C
IPAK
TO-92
Rthj-case
Thermal Resistance Junction-case Max
4.1
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
120
C/W
Rthj-lead
Thermal Resistance Junction-lead Max
40
C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
275
260
C
Symbol
Parameter
Max Value
Unit
IPAK
TO-92
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
1.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
25
mJ
3/11
STD2NC45-1, STQ1NC45
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
450
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2.3
3
3.7
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 0.5 A
4.1
4.5
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 0.5 A
1.1
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
160
27.5
4.7
pF
pF
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 225 V, I
D
= 0.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
6.7
4
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 360V, I
D
= 1.5 A,
V
GS
= 10V, R
G
= 4.7
7
1.3
3.2
10
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 360V, I
D
= 1.5 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
8.5
12
18
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
1.5
6.0
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 1.5 A, V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 1.5 A, di/dt = 100A/s
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
225
530
4.7
ns
C
A
STD2NC45-1, STQ1NC45
4/11
Safe Operating Area For IPAK
Thermal Impedance For TO-92
Safe Operating Area For TO-92
Thermal Impedance For IPAK
Output Characteristics
Transfer Characteristics
5/11
STD2NC45-1, STQ1NC45
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Gate Charge vs Gate-source Voltage
Transconductance
Static Drain-source On Resistance
Capacitance Variations
PDF 
ZIP