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February 2005
STD30NF03LT
N-CHANNEL 30V - 0.017
- 30A DPAK
STripFETTMII MOSFET
Table 1: General Features
s
TYPICAL R
DS
(on) = 0.017
s
LOGIC LEVEL GATE DRIVE
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique "Single Feature Size
TM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibilit
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
I
D
(1)
STD30NF03LT
30 V
< 0.025
30 A
DPAK
1
3
Part Number
Marking
Package
Packaging
STD30NF03LTT4
D30NF03LT
DPAK
TAPE & REEL
Rev. 1
STD30NF03LT
2/10
Table 3: Absolute Maximum ratings
(
q
) Pulse width limited by safe operating area
(1) I
SD
30A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(2) Starting T
j
= 25 C, I
D
= 15A, V
DD
= 25 V
Table 4: Thermal Data
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 6: On /Off
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
30
A
I
D
Drain Current (continuous) at T
C
= 100C
21
A
I
DM
( )
Drain Current (pulsed)
120
A
P
TOT
Total Dissipation at T
C
= 25C
50
W
Derating Factor
0.33
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
4
V/ns
E
AS
(2)
Single Pulse Avalanche Energy
450
mJ
T
stg
Storage Temperature
55 to 175
C
T
j
Operating Junction Temperature
Rthj-Case
Thermal Resistance Junction-Case
3.0
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
275
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
40
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 15 V)
2.3
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating,
T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.7
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 6 V, I
D
= 15 A
0.025
0.035
V
GS
= 10 V, I
D
= 15 A
0.017
0.025
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STD30NF03LT
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On
Table 9: Switching
Table 10: Source Drain Diode
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> =15 V
,
I
D
=15 A
30
S
C
iss
Input Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
750
pF
C
oss
Output Capacitance
280
pF
C
rss
Reverse Transfer
Capacitance
70
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 15 V, I
D
= 15 A
R
G
= 4.7
V
GS
= 6 V
(see test circuit, Figure 3)
15
ns
t
r
Rise Time
30
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15 V, I
D
= 30 A,
V
GS
= 6 V
13
5.5
5
18
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 15 V, I
D
= 15 A
R
G
= 4.7
V
GS
= 6 V
(see test circuit, Figure 3)
20
10
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
30
A
I
SDM
(2)
Source-drain Current
(pulsed)
120
A
V
SD
(1)
Forward On Voltage
I
SD
= 30 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 30 A, di/dt = 100 A/s,
V
DD
= 20 V, T
j
= 150C
(see test circuit, Figure 5)
35
38
2.5
ns
nC
A
STD30NF03LT
4/10
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance
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STD30NF03LT
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 11: Capacitance Variations
Figure 12: Normalized On Resistance vs Tem-
perature
Figure 13: Normalized BVDSS vs Temperature
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