P-CHANNEL 30V - 0.025 OHM - 24A IPAK/DPAK STRIPFET II POWER MOSFET
1/10
May 2003
.
STD30PF03L
P-CHANNEL 30V - 0.025
- 24A IPAK/DPAK
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.025
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s
LOW TRESHOLD DEVICE
s
LOW GATE CHARGE
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
This MOSFET is the latest development of
STMicroelectronics unique "Single Feature SizeTM" strip-
based process The resulting transistor shows extremely
high packing density for low on-resistance and low gate
charge.
APPLICATIONS
s
DC-DC CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STD30PF03L
30 V
<0.028
24
3
2
1
1
3
IPAK
TO-251
(Suffix "-1")
DPAK
TO-252
(Suffix "T4")
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(#) Current limited by wire bonding
(1) Starting T
j
= 25
o
C, I
D
=12 A, V
DD
= 15V
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
SALES TYPE
MARKING
PACKAGE
PACKAGING
STD30PF03LT4
STD30PF03L-1
D30PF30L
D30PF30L
TO-252
TO-251
TAPE & REEL
TUBE
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
16
V
I
D(#)
Drain Current (continuous) at T
C
= 25C
24
A
I
D(#)
Drain Current (continuous) at T
C
= 100C
24
A
I
DM
(
)
Drain Current (pulsed)
96
A
P
tot
Total Dissipation at T
C
= 25C
70
W
Derating Factor
0.47
W/C
E
AS(1)
Single Pulse Avalanche Energy
850
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STD30PF03L
2/10
THERMAL DATA
(*)
When Mounted on 1 inch
2
FR-4 board, 2 oz of Cu
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-case
Rthj-amb
Rthj-pcb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
(*)
Thermal Resistance Junction-pcb
Maximum Lead Temperature For Soldering Purpose
Max
Max
Max
2.14
100
50
275
C/W
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 100C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 12 A
V
GS
= 5 V
I
D
= 12 A
0.025
0.032
0.028
0.040
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
= 15 V
I
D
= 12 A
23
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1670
345
120
pF
pF
pF
3/10
STD30PF03L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 25 V
I
D
= 24 A
R
G
= 4.7
V
GS
= 5 V
(Resistive Load, Figure 3)
64
122
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15V I
D
= 24A V
GS
= 5V
21
5.5
11
28
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 25 V
I
D
= 24 A
R
G
= 4.7
,
V
GS
= 5 V
(Resistive Load, Figure 3)
36
26
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
24
96
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 12 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 24 A
di/dt = 100A/s
V
DD
= 24 V
T
j
= 150C
(see test circuit, Figure 5)
40
52
2.6
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STD30PF03L
4/10
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/10
STD30PF03L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
.
.
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