1/9
November 2003
STD35NF06L
N-CHANNEL 60V - 0.014
- 35A DPAK
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.014
s
LOW THRESHOLD DRIVE
s
GATE CHARGE MINIMIZED
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s
DC-AC CONVERTERS
s
AUTOMOTIVE SWITCHING APPLICATION
TYPE
V
DSS
R
DS(on)
I
D
STD35NF06L
60 V
< 0.017
35 A
1
3
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(1) I
SD
35A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
=30V
SALES TYPE
MARKING
PACKAGE
PACKAGING
STD35NF06LT4
D35NF06L
TO-252
TAPE & REEL
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
16
V
I
D
Drain Current (continuous) at T
C
= 25C
35
A
I
D
Drain Current (continuous) at T
C
= 100C
24.5
A
I
DM
(
)
Drain Current (pulsed)
140
A
P
tot
Total Dissipation at T
C
= 25C
80
W
Derating Factor
0.67
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
5
V/ns
E
AS (2)
Single Pulse Avalanche Energy
280
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
STD35NF06L
2/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(*)
DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)
Max
Max
1.88
100
275
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 17.5 A
V
GS
= 4.5 V
I
D
= 17.5 A
0.014
0.016
0.017
0.020
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
=
15 V
I
D
= 17.5 A
28
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz V
GS
= 0
1700
305
105
pF
pF
pF
3/9
STD35NF06L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30 V
I
D
=27.5 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 3)
20
100
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48 V I
D
= 55 A V
GS
=4.5 V
25
5
10
33
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 30 V
I
D
=27.5 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 3)
40
20
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
35
140
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 35 A V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 35 A
di/dt = 100A/s
V
DD
= 30 V
T
j
= 150C
(see test circuit, Figure 5)
80
200
5
ns
Q
C
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STD35NF06L
4/9
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/9
STD35NF06L
Normalized Gate Threshold Voltage vs Temperature
Normalized
on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
.
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