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September 2002
STP4NM60
STD3NM60 - STD3NM60-1
N-CHANNEL 600V - 1.3
- 3A TO-220/DPAK/IPAK
Zener-Protected MDmeshTMPower MOSFET
s
TYPICAL R
DS
(on) = 1.3
s
HIGH dv/dt AND AVALANCHE CAPABILITIES
s
IMPROVED ESD CAPABILITY
s
LOW INPUT CAPACITANCE AND GATE
CHARGE
s
LOW GATE INPUT RESISTANCE
s
TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmeshTM
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP4NM60
STD3NM60
STD3NM60-1
600 V
600 V
600 V
< 1.5
< 1.5
< 1.5
4 A
3 A
3 A
69 W
42 W
42 W
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP4NM60
P4NM60
TO-220
TUBE
STD3NM60T4
D3NM60
DPAK
TAPE & REEL
STD3NM60-1
D3NM60
IPAK
TUBE
TO-220
IPAK
DPAK
1
3
3
2
1
INTERNAL SCHEMATIC DIAGRAM
STP4NM60 / STD3NM60 / STD3NM60-1
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ABSOLUTE MAXIMUM RATINGS
(
l
) Pulse width limited by safe operating area
(1) I
SD
3A, di/dt
400
A, V
DD
V
(BR)DSS
, T
j
T
JMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
STP4NM60
STD3NM60
STD3NM60-1
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
4
3
A
I
D
Drain Current (continuous) at T
C
= 100C
2.52
1.9
A
I
DM
(
l
)
Drain Current (pulsed)
16
12
A
P
TOT
Total Dissipation at T
C
= 25C
69
42
W
Derating Factor
0.55
0.33
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-65 to 150
-65 to 150
C
C
TO-220
DPAK
IPAK
Rthj-case
Thermal Resistance Junction-case Max
1.82
3
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
1.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
200
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs= 1mA (Open Drain)
30
V
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STP4NM60 / STD3NM60 / STD3NM60-1
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
5
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 1.5 A
1.3
1.5
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 1.5 A
2.7
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
324
132
7.4
pF
pF
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 300 V, I
D
= 1.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
9
4
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480V, I
D
= 3 A,
V
GS
= 10V
10
3
4.7
14
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V, I
D
= 3 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
16.5
10.5
15
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
3
12
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 3 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 3 A, di/dt = 100A/s
V
DD
= 100 V, T
j
= 25C
(see test circuit, Figure 5)
224
1
9
ns
C
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 3 A, di/dt = 100A/s
V
DD
= 100 V, T
j
= 150C
(see test circuit, Figure 5)
296
1.4
9.3
ns
C
A
STP4NM60 / STD3NM60 / STD3NM60-1
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Thermal Impedance For DPAK / IPAK
Safe Operating Area For DPAK / IPAK
Safe Operating Area For TO-220
Transfer Characteristics
Output Characteristics
Thermal Impedance For TO-220
5/12
STP4NM60 / STD3NM60 / STD3NM60-1
Normalized On Resistance vs Temperature
Normalized Gate Threshold Voltage vs Temp.
Capacitance Variations
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Transconductance
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