STD5N20
N - CHANNEL 200V - 0.7
- 5A - TO-251/TO-252
POWER MOS TRANSISTOR
s
TYPICAL R
DS(on)
= 0.7
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
150
o
C OPERATING TEMPERATURE
s
APPLICATION ORIENTED
CHARACTERIZATION
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
DC-DC CONVERTERS & DC-AC INVERTERS
s
TELECOMMUNICATION POWER SUPPLIES
INDUSTRIAL MOTOR DRIVES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Un it
V
DS
Drain-source Volt age (V
GS
= 0)
200
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
200
V
V
GS
G ate-source Voltage
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
5
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
3.5
A
I
DM
(
)
Drain Current (pulsed)
20
A
P
tot
T otal Dissipation at T
c
= 25
o
C
45
W
Derating Fact or
0. 36
W /
o
C
T
s tg
Storage T emperature
-65 t o 150
o
C
T
j
Max. Operating Junction Temperat ure
150
o
C
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD5N20
200 V
< 0.8
5 A
March 1999
3
2
1
IPAK
TO-251
(Suffix "-1")
1
3
DPAK
TO-252
(Suffix "T4")
1/10
THERMAL DATA
R
thj -case
R
thj -amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
Maximum Lead Temperature F or Soldering Purpose
2.77
100
1.5
275
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,)
5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
130
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
200
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
=125
o
C
10
100
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 2.5 A
0.7
0. 8
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
5
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
= 2.5 A
1. 5
3
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
450
75
15
600
100
20
pF
pF
pF
STD5N20
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 100 V
I
D
= 2.5 A
R
G
= 4.7
V
GS
= 10 V
(see t est circuit, f igure 3)
7
6
10
8
ns
ns
(di/dt)
on
Turn-on Current Slope
V
DD
= 160 V
I
D
= 5 A
R
G
= 47
V
GS
= 10 V
(see t est circuit, f igure 5)
400
A/
s
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 160 V
I
D
= 5 A
V
G S
= 10 V
18
6
7
25
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
r (Voff)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
V
DD
= 160 V
I
D
= 5 A
R
G
= 4.7
V
G S
= 10 V
(see t est circuit, f igure 5)
7
5
15
10
7
20
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
5
20
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 5 A
V
GS
= 0
1. 5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 5 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
(see t est circuit, f igure 5)
180
1125
12.5
ns
nC
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STD5N20
3/10
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STD5N20
4/10
Capacitance Variations
Normalized On Resistance vs Temperature
Turn-off Drain-source Voltage Slope
Normalized Gate Threshold Voltage vs
Temperature
Turn-on Current Slope
Cross-over Time
STD5N20
5/10
PDF 
ZIP