1/10
September 2002
STD5NM50
STD5NM50-1
N-CHANNEL 500V - 0.7
- 7.5A DPAK/IPAK
MDmeshTMPower MOSFET
(1) I
SD
5A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
n
TYPICAL R
DS
(on) = 0.7
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
n
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmeshTM
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD5NM50
STD5NM50-1
500V
500V
<0.8
<0.8
7.5 A
7.5 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
7.5
A
I
D
Drain Current (continuous) at T
C
= 100C
4.7
A
I
DM
(
l
)
Drain Current (pulsed)
30
A
P
TOT
Total Dissipation at T
C
= 25C
100
W
Derating Factor
0.8
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
T
stg
Storage Temperature
55 to 150
C
T
j
Max. Operating Junction Temperature
1
3
DPAK
TO-252
3
2
1
IPAK
TO-251
(Add Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
STD5NM50/STD5NM50-1
2/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Rthj-case
Thermal Resistance Junction-case Max
1.25
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
2.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
300
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 2.5A
0.7
0.8
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 25V
x,
I
D
= 2.5A
3.5
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
415
pF
C
oss
Output Capacitance
88
pF
C
rss
Reverse Transfer
Capacitance
12
pF
C
oss eq.
(2)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 400V
50
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
3
3/10
STD5NM50/STD5NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 250V, I
D
= 2.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
16
ns
t
r
Rise Time
8
ns
Q
g
Total Gate Charge
V
DD
= 400V, I
D
= 7.5A
V
GS
= 10V
13
nC
Q
gs
Gate-Source Charge
5
nC
Q
gd
Gate-Drain Charge
6
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 400V, I
D
= 5A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
14
ns
t
f
Fall Time
6
ns
t
c
Cross-over Time
13
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
7.5
A
I
SDM
(2)
Source-drain Current (pulsed)
30
A
V
SD
(1)
Forward On Voltage
I
SD
= 7.5A, V
GS
= 0
1.5
V
t
rr
Reverse Recovery Time
I
SD
= 5A, di/dt = 100A/s,
V
DD
= 100V, T
j
= 25C
(see test circuit, Figure 5)
185
ns
Q
rr
Reverse Recovery Charge
1.1
C
I
RRM
Reverse Recovery Current
11.5
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 5A, di/dt = 100A/s,
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
270
1.6
12
ns
C
A
Thermal Impedance
Safe Operating Area
STD5NM50/STD5NM50-1
4/10
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Transfer Characteristics
Transconductance
Output Characteristics
Capacitance Variations
5/10
STD5NM50/STD5NM50-1
Normalized On Resistance vs Temperature
Normalized BVDSS vs Temperature
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
PDF 
ZIP