ChipFind - документация

Электронный компонент: STD5NM60

Скачать:  PDF   ZIP

Document Outline

1/16
April 2005
STP8NM60 - STP8NM60FP
STB8NM60 - STD5NM60 - STD5NM60-1
N-CHANNEL 650V@Tjmax-0.9
-8A TO-220/FP/D/IPAK/DPAK
STripFETTM II MOSFET
Table 1: General Features
s
TYPICAL R
DS
(on) = 0.9
s
HIGH dv/dt AND AVALANCHE CAPABILITIES
s
100% AVALANCHE TESTED
s
LOW INPUT CAPACITANCE AND GATE
CHARGE
s
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmeshTM
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizon-
tal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company's proprietary strip tech-
nique yields overall dynamic performance that is
significantly better than that of similar completi-
tion's products.
APPLICATIONS
The MDmeshTM family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP8NM60
STP8NM60FP
STD5NM60
STD5NM60-1
STB8NM60
650 V
650 V
650 V
650 V
650 V
< 1
< 1
< 1
< 1
< 1
8 A
8 A(*)
5 A
5 A
5 A
100 W
30 W
96 W
96 W
96 W
1
2
3
TO-220
TO-220FP
1
3
DPAK
3
2
1
IPAK
1
3
D
PAK
Sales Type
Marking
Package
Packaging
STP8NM60
P8NM60
TO-220
TUBE
STP8NM60FP
P8NM60FP
TO-220FP
TUBE
STD5NM60
D5NM60
DPAK
TAPE & REEL
STD5NM60-1
D5NM60
IPAK
TUBE
STB8NM60
B8NM60
DPAK
TAPE & REEL
Rev. 2
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60
2/16
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
SD
5A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Value
Unit
TO-220/DPAK
TO-220FP
DPAK/IPAK
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
8
8 (*)
5
A
I
D
Drain Current (continuous) at T
C
= 100C
5
5 (*)
3.1
A
I
DM
( )
Drain Current (pulsed)
32
32 (*)
20
A
P
TOT
Total Dissipation at T
C
= 25C
100
30
96
W
Derating Factor
0.8
0.24
0.4
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
15
15
15
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
-
V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
C
TO-220/DPAK
TO-220FP
DPAK/IPAK
Rthj-case
Thermal Resistance Junction-case Max
1.25
4.16
1.3
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
2.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
200
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current
(V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating,
T
C
= 125 C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source
On Resistance
V
GS
= 10V, I
D
= 2.5 A
0.9
1
3/16
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On/Off
Table 9: Source Drain Diode
(2) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
DS
= I
D(on)
x R
DS(on)max,
I
D
= 2.5A
2.4
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
440
100
10
pF
pF
pF
C
oss eq.
(2)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 480V
50
pF
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 300 V, I
D
= 2.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
14
10
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400V, I
D
= 5 A,
V
GS
= 10V
13
5
6
18
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 300 V, I
D
= 2.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
23
10
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480V, I
D
= 5 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
7
10
17
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
( )
Source-drain Current
Source-drain Current (pulsed)
8
32
A
A
V
SD
(2)
Forward On Voltage
I
SD
= 5 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 5 A, di/dt = 100A/s
V
DD
= 100 V, T
j
= 25C
(see test circuit, Figure 5)
300
1950
13
ns
C
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 5 A, di/dt = 100A/s
V
DD
= 100 V, T
j
= 150C
(see test circuit, Figure 5)
445
3005
13.5
ns
C
A
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60
4/16
Figure 3: Safe Operating Area for TO-220/
DPAK
Figure 4: Safe Operating Area for TO-220FP
Figure 5: Safe Operating Area for DPAK/IPAK
Figure 6: Thermal Impedance for TO-220/
DPAK
Figure 7: Thermal Impedance for TO-220FP
Figure 8: Thermal Impedance for DPAK/IPAK
5/16
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60
Figure 9: Output Characteristics
Figure 10: Transconductance
Figure 11: Gate Charge vs Gate source Voltage
Figure 12: Transfer Characteristics
Figure 13: Static Drain-Source on Resistance
Figure 14: Capacitance Variations
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60
6/16
Figure 15: Normalized Gate Thereshold Volt-
age vs Temperature j
Figure 16: Source Drain Diode Forward Char-
acteristics
Figure 17: Normalized on Resistance vs Tem-
perature
7/16
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60
Figure 18: Unclamped Inductive Load Test Cir-
cuit
Figure 19: Switching Times Test Circuit For
Resistive Load
Figure 20: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 21: Unclamped Inductive Wafeform
Figure 22: Gate Charge Test Circuit
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60
8/16
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
0.645
L30
28.90
1.137
P
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
TO-220 MECHANICAL DATA
9/16
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
TO-220FP MECHANICAL DATA
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60
10/16
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3 0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
0.033
B5
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A
C2
C
A3
H
A1
D
L
L2
L1
1 3
= =
B3
B
B6
B2
E
G
= =
= =
B5
2
TO-251 (IPAK) MECHANICAL DATA
0068771-E
11/16
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60
12/16
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0.795
G
16.4
18.4
0.645
0.724
N
50
1.968
T
22.4
0.881
BASE QTY
BULK QTY
2500
2500
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
6.8
7
0.267
0.275
B0
10.4
10.6
0.409
0.417
B1
12.1
0.476
D
1.5
1.6
0.059
0.063
D1
1.5
0.059
E
1.65
1.85
0.065
0.073
F
7.4
7.6
0.291
0.299
K0
2.55
2.75
0.100
0.108
P0
3.9
4.1
0.153
0.161
P1
7.9
8.1
0.311
0.319
P2
1.9
2.1
0.075
0.082
R
40
1.574
W
15.7
16.3
0.618
0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
13/16
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60
TO-247 MECHANICAL DATA
1
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.393
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
4
D
2
PAK MECHANICAL DATA
3
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60
14/16
TAPE AND REEL SHIPMENT
D
2
PAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
R
50
1.574
T
0.25
0.35
0.0098 0.0137
W
23.7
24.3
0.933
0.956
TAPE MECHANICAL DATA
15/16
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1 - STB8NM60 - STB8NM60
Table 10: Revision History
Date
Revision
Description of Changes
11-Apr-2005
2
Inserted DPAK.
STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60
16/16
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America