STD790A
MEDIUM CURRENT, HIGH PERFORMANCE,
LOW VOLTAGE PNP TRANSISTOR
s
VERY LOW COLLECTOR TO EMITTER
SATURATION VOLTAGE
s
DC CURRENT GAIN, h
FE
> 100
s
3 A CONTINUOUS COLLECTOR CURRENT
s
60 V BREAKDOWN VOLTAGE (V
(BR)CER
)
s
SURFACE MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(Suffix "T4")
APPLICATIONS
s
SWITCHING REGULATOR IN BATTERY
CHARGER APPLICATIONS
s
SUITABLE FOR AUTOMOTIVE
APPLICATIONS (V
(BR)CER
> 60V)
s
VOLTAGE REGULATION IN BIAS SUPPLY
CIRCUITS
s
HEAVY LOAD DRIVER
DESCRIPTION
The device is manufactured in low voltage PNP
Planar Technology by using a "Base Island"
layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
INTERNAL SCHEMATIC DIAGRAM
March 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
-60
V
V
CER
Collector-Emitter Voltage (R
BE
= 47
)
-60
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
-5
V
I
C
Collector Current
-3
A
I
CM
Collector Peak Current (t
p
< 5 ms)
-6
A
P
tot
Total Dissipation at T
C
= 25
o
C
15
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
Type
Marking
STD790A
D790A
1
3
DPAK
( TO-252)
(Suffix "T4")
1/6
THERMAL DATA
R
th j-case
Thermal Resistance Junction-Case Max
8.33
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -30 V
V
CB
= -30 V T
j
= 100
o
C
-0.1
-10
A
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= -4 V
-1
A
V
(BR)CER
Collector-Emitter
Breakdown Voltage
(R
BE
= 47
)
I
C
= -10 mA
-60
V
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
I
C
= -100
A
-60
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= -100
A
-5
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= -0.5A I
B
= -5mA
I
C
= -1A I
B
= -10mA
I
C
= -2A I
B
= -20mA
I
C
= -3A I
B
= -30mA
I
C
= -3A I
B
= -30mA T
j
= 100
o
C
-0.15
-0.3
-0.5
-0.7
-0.9
V
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= -1 A I
B
= -10 mA
-0.8
-1.0
V
V
BE(on)
Base-Emitter Turn-On
Voltage
I
C
= -1 A V
CE
= -2 V
-0.8
-1
V
h
FE
DC Current Gain
I
C
= -10 mA V
CE
= -2 V
I
C
= -500 mA V
CE
= -2 V
I
C
= -1 A V
CE
= -2 V
I
C
= -2 A V
CE
= -1 V
I
C
= -3 A V
CE
= -1V
100
100
100
100
90
200
200
160
130
300
300
f
T
Transition Frequency
I
C
= -50 mA V
CE
= -5V f = 50MHz
100
MHz
t
d
t
r
t
s
t
f
RESISTIVE LOAD
Delay Time
RiseTime
StorageTime
Fall Time
I
C
= -3 A I
B1
= - I
B2
= -60 mA
V
CC
= -20 V (see figure 1)
180
160
250
80
220
210
300
100
ns
ns
ns
ns
Pulsed: Pulse duration = 300
s, duty cycle
1.5 %
STD790A
2/6
Switching Times Resistive Load
Switching Times Resistive Load
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
DC Current Gain
STD790A
3/6
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