STD9N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
TYPICAL R
DS(on)
= 0.23
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
175
o
C OPERATING TEMPERATURE
s
APPLICATION ORIENTED
CHARACTERIZATION
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
DS
Drain-source Voltage (V
GS
= 0)
100
V
V
DGR
Drain- gate Voltage (R
G S
= 20 k
)
100
V
V
GS
Gate-source Voltage
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
9
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
6
A
I
DM
(
)
Drain Current (pulsed)
36
A
P
t ot
Total Dissipation at T
c
= 25
o
C
45
W
Derat ing Factor
0.3
W/
o
C
T
stg
St orage Temperature
-65 to 175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
ST D9N10
100 V
< 0.27
9 A
March 1996
3
2
1
IPAK
TO-251
(Suffix "-1")
1
3
DPAK
TO-252
(Suffix "T4")
1/10
THERMAL DATA
R
t hj-ca se
R
t hj- amb
R
thc- si nk
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead T emperature For Soldering Purpose
3.33
100
1.5
275
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
I
AR
Avalanche Current , Repet itive or Not -Repetitive
(pulse widt h limited by T
j
max,
< 1%)
9
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
30
mJ
E
AR
Repetit ive Avalanche Energy
(pulse widt h limited by T
j
max,
< 1%)
7
mJ
I
AR
Avalanche Current , Repet itive or Not -Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
< 1%)
6
A
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
Drain-source
Breakdown Volt age
I
D
= 250
A
V
G S
= 0
100
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0. 8
T
c
= 125
o
C
250
1000
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
G S
=
20 V
100
nA
ON (
)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
GS(th)
Gate T hreshold Voltage V
DS
= V
GS
I
D
= 250
A
2
3
4
V
R
DS( on)
St atic Drain-source On
Resistance
V
G S
= 10V
I
D
= 4.5 A
V
G S
= 10V
I
D
= 4.5 A
T
c
= 100
o
C
0. 23
0.27
0.54
I
D(o n)
On Stat e Drain Current
V
DS
> I
D(on)
x R
DS(on) max
V
G S
= 10 V
9
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(on)
x R
DS(on) max
I
D
= 4.5 A
2
4
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
330
90
25
450
120
40
pF
pF
pF
STD9N10
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
t
r
Turn-on T ime
Rise Time
V
DD
= 50 V
I
D
= 4.5 A
R
G
= 4.7
V
GS
= 10 V
(see t est circuit, figure 3)
10
40
15
60
ns
ns
(di/ dt)
on
Turn-on Current Slope
V
DD
= 80 V
I
D
= 9 A
R
G
= 4.7
V
GS
= 10 V
(see t est circuit, figure 5)
440
A/
s
Q
g
Q
gs
Q
gd
Total Gat e Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 80 V
I
D
= 9 A
V
GS
= 10 V
15
6
5
25
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall T ime
Cross-over T ime
V
DD
= 80 V
I
D
= 9 A
R
G
= 4.7
V
G S
= 10 V
(see t est circuit, figure 5)
15
25
50
25
35
70
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
9
36
A
A
V
SD
(
)
Forward O n Volt age
I
SD
= 9 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 9 A
di/dt = 100 A/
s
V
DD
= 20 V
T
j
= 150
o
C
(see t est circuit, figure 5)
80
0.2
5
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STD9N10
3/10
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STD9N10
4/10
Capacitance Variations
Normalized On Resistance vs Temperature
Turn-off Drain-source Voltage Slope
Normalized Gate Threshold Voltage vs
Temperature
Turn-on Current Slope
Cross-over Time
STD9N10
5/10
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