STE180NE10
N-CHANNEL 100V - 4.5 m
- 180A ISOTOP
STripFET
TM
POWER MOSFET
s
TYPICAL R
DS(on)
= 4.5 m
s
100% AVALANCHE TESTED
s
LOW INTRINSIC CAPACITANCE
s
GATE CHARGE MINIMIZED
s
REDUCED VOLTAGE SPREAD
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
"Single
Feature
Size
TM
" strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
SMPS & UPS
s
MOTOR CONTROL
s
WELDING EQUIPMENT
s
OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
INTERNAL SCHEMATIC DIAGRAM
November 1999
TYPE
V
DSS
R
DS(on)
I
D
STE180NE10
100 V
< 6 m
180 A
ISOTOP
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Un it
V
DS
Drain-source Volt age (V
GS
= 0)
100
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
100
V
V
GS
G ate-source Voltage
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
180
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
119
A
I
DM
(
)
Drain Current (pulsed)
540
A
P
tot
T otal Dissipation at T
c
= 25
o
C
360
W
Derating Fact or
2. 88
W /
o
C
V
ISO
I nsulation Withstand Voltage (AC-RMS)
2500
V
T
s tg
Storage T emperature
-55 t o 150
o
C
T
j
Max. Operating Junction Temperat ure
150
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
180 ,
di/d
200 A/
s, V
DD
V
( BR)DSS
, T
j
T
JMAX
1/8
THERMAL DATA
R
thj -case
R
thc-h
Thermal Resistance Junction-case
Max
Thermal Resistance Case-heat sink With conductive
Grease Applied
Max
0.347
0.05
o
C/W
o
C/W
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
60
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
720
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1 mA
V
GS
= 0
100
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
= 125
o
C
4
40
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
20 V
400
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 1 mA
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 90 A
4.5
6
m
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
180
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
= 80 A
30
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
21
2.5
0.9
nF
nF
nF
STE180NE10
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay T ime
Rise Time
V
DD
= 50 V
I
D
= 90 A
R
G
= 4.7
V
G S
= 10 V
(Resistive Load, see fig. 3)
35
100
ns
ns
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 80 V I
D
= 180 A V
GS
= 10 V
142
37
60
185
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-off Delay T ime
Fall T ime
V
DD
= 50 V
I
D
= 90 A
R
G
= 4.7
V
G S
= 10 V
(Resistive Load, see fig. 3)
110
100
ns
ns
t
r (Voff)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
V
DD
= 80 V
I
D
= 180 A
R
G
= 4.7
V
G S
= 10 V
(Induct ive Load, see fig. 5)
100
50
92
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
180
540
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 180 A
V
G S
= 0
1. 5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 180 A
di/dt = 100 A/
s
V
DD
= 50 V
T
j
= 150
o
C
(see t est circuit, f ig. 5)
170
850
10
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STE180NE10
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STE180NE10
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STE180NE10
5/8
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