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May 2002
STE53NC50
N-CHANNEL 500V - 0.070
- 53A ISOTOP
PowerMeshTMII MOSFET
(1) I
SD
53A, di/dt
100 A/
s, V
DD
24V, Tj
T
jMAX
n
TYPICAL R
DS
(on) = 0.07
n
EXTREMELY HIGH dv/dt CAPABILITY
n
100% AVALANCHE TESTED
n
NEW HIGH VOLTAGE BENCHMARK
n
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
TM
II is
the evolution of the first
generation of MESH OVERLAY
TM.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITH MODE POWER SUPPLIES (SMPS)
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STE53NC50
500V
< 0.08
53 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
53
A
I
D
Drain Current (continuos) at T
C
= 100C
33
A
I
DM
(
l
)
Drain Current (pulsed)
212
A
P
TOT
Total Dissipation at T
C
= 25C
460
W
Derating Factor
3.68
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
3
V/ns
V
ISO
Insulation Winthstand Voltage (AC-RMS)
2500
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
STE53NC50
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
Rthj-case
Thermal Resistance Junction-case Max
0.272
C/W
Rthc-h
Thermal Resistance Case-heatsink with Conductive
Grease Applied
0.05
C/W
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
53
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
1043
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
10
A
V
DS
= Max Rating, T
C
= 125 C
100
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 27A
0.07
0.08
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 15 A
42
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
11.2
nF
C
oss
Output Capacitance
1350
pF
C
rss
Reverse Transfer
Capacitance
115
pF
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STE53NC50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 250V, I
D
= 26.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
46
ns
t
r
Rise Time
70
ns
Q
g
Total Gate Charge
V
DD
= 400V, I
D
= 53A,
V
GS
= 10V
310
434
nC
Q
gs
Gate-Source Charge
46
nC
Q
gd
Gate-Drain Charge
150
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 400V, I
D
= 53A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
45
ns
t
f
Fall Time
38
ns
t
c
Cross-over Time
85
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
53
A
I
SDM
(2)
Source-drain Current (pulsed)
212
A
V
SD
(1)
Forward On Voltage
I
SD
= 53A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 53A, di/dt = 100A/s,
V
DD
= 70V, T
j
= 150C
(see test circuit, Figure 5)
760
ns
Q
rr
Reverse Recovery Charge
17.86
C
I
RRM
Reverse Recovery Current
47
A
Safe Operating Area
Thermal Impedence
STE53NC50
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Gate Charge vs Gate-source Voltage
Transconductance
Output Characteristics
Capacitance Variations
Static Drain-source On Resistance
Transfer Characteristics
5/8
STE53NC50
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
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