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March 2005
STP12PF06
STF12PF06
P-CHANNEL 60V - 0.18
- 12A TO-220/TO-220FP
STripFETTM II POWER MOSFET
Rev.
2.0
Figure 1:Package
Table 1: General Features
TYPICAL R
DS
(on) = 0.18
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
APPLICATIONS
MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STP12PF06
STF12PF06
60 V
60 V
< 0.20
< 0.20
12 A
12 A
1
2
3
1
2
3
TO-220
TO-220FP
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
Table 3: ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
NOTE
:
For the P-CHANNEL MOSFET actual polarity of voltages
and current has to be reversed.
(1) I
SD
12A, di/dt
200A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 12A, V
DD
= 25V
PART NUMBER
MARKING
PACKAGE
PACKAGING
STP12PF06
STF12PF06
P12PF06
F12PF06
TO-220
TO-220FP
TUBE
TUBE
Symbol
Parameter
Value
Unit
STP20PF06
STF20PF06
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
12
8
A
I
D
Drain Current (continuous) at T
C
= 100C
8.4
5.6
A
I
DM
(
)
Drain Current (pulsed)
48
32
A
P
tot
Total Dissipation at T
C
= 25C
60
225
W
Derating Factor
0.4
0.17
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
6
V/ns
E
AS (2)
Single Pulse Avalanche Energy
200
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
STP12PF06 STF12PF06
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Table 4: THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
Table 5: OFF
Table 6: ON
(*)
Table 7: DYNAMIC
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case
Max
2.5
5.35
C/W
Rthj-amb
T
l
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
62.5
300
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
2
3.4
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 10 A
0.18
0.20
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (2)
Forward Transconductance
V
DS
=
15 V
I
D
= 6 A
2.5
6
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz V
GS
= 0
850
230
75
pF
pF
pF
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STP12PF06 STF12PF06
Table 8: SWITCHING ON
Table 9: SWITCHING OFF
Table 10: SOURCE DRAIN DIODE
(1 )
Pulse width limited by safe operating area.
(2)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30 V
I
D
= 6 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 19)
20
40
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48 V I
D
= 12 A V
GS
= 10 V
16
4
6
21
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 30 V
I
D
= 6 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 19)
40
10
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(1)
Source-drain Current
Source-drain Current (pulsed)
10
40
A
A
V
SD
(2)
Forward On Voltage
I
SD
= 12 A V
GS
= 0
2.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 12 A
di/dt = 100A/s
V
DD
= 30 V
T
j
= 150C
(see test circuit, Figure 21)
100
260
5.2
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Figure 3: Safe Operating Area for TO-220
Figure 4: Safe Operating Area for TO-220FP
STP12PF06 STF12PF06
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Figure 5: Thermal Impedance
Figure 6: Thermal Impedance for TO-220FP
Figure 7: Output Characteristics
Figure 8: Transfer Characteristics
Figure 9: Transconductance
Figure 10: Static Drain-source On Resistance
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STP12PF06 STF12PF06
Figure 11: Gate Charge vs Gate-source Voltage
Figure 12: Capacitance Variations
Figure 13: Normalized Gate Threshold Voltage vs
Temperature
Figure 14: Normalized on Resistance vs Temperature
Figure 15: Source-drain Diode Forward
Characteristics
Figure 16: Normalized Breakdown Voltage
Temperature
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