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Электронный компонент: STGB3NB60HD

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STGB3NB60HD
N-CHANNEL 3A - 600V TO-263
PowerMESH
TM
IGBT
s
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s
LOW ON-VOLTAGE DROP (V
cesat
)
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
VERY HIGH FREQUENCY OPERATION
s
OFF LOSSES INCLUDE TAIL CURRENT
s
CO-PACKAGED WITH TURBOSWITCH
TM
ANTIPARALLEL DIODE
s
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
TM
IGBTs,
with
outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Un it
V
CES
Collector-Emitter Volt age (V
G S
= 0)
600
V
V
GE
G ate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at T
c
= 25
o
C
6
A
I
C
Collector Current (continuous) at T
c
= 100
o
C
3
A
I
CM
(
)
Collector Current (pulsed)
24
A
P
tot
T otal Dissipation at T
c
= 25
o
C
70
W
Derating Fact or
0. 56
W /
o
C
T
s tg
Storage T emperature
-65 t o 150
o
C
T
j
Max. Operating Junction Temperat ure
150
o
C
(
) Pulse width limited by max. junction temperature
T YPE
V
CES
V
CE(sat)
I
C
STGB3NB60HD
600 V
< 2.8 V
3 A
June 1999
1
3
D
2
PAK
TO-263
(Suffix "T4")
1/8
THERMAL DATA
R
thj -case
R
thj -amb
R
thc-sink
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
1.78
62. 5
0.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
j
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitt er
Breakdown Voltage
I
C
= 250
A
V
GE
= 0
600
V
I
CES
Collector cut-of f
(V
G E
= 0)
V
CE
= Max Rat ing
T
j
=
25
o
C
V
CE
= Max Rat ing
T
j
= 125
o
C
100
1000
A
A
I
G ES
Gat e-Emitter Leakage
Current (V
CE
= 0)
V
GE
=
20 V
V
CE
= 0
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G E(th)
Gat e Threshold
Voltage
V
CE
= V
GE
I
C
= 250
A
3
5
V
V
CE(SAT )
Collector-Emitt er
Sat uration Voltage
V
GE
= 15 V
I
C
= 3 A
V
GE
= 15 V
I
C
= 3 A
T
j
= 125
o
C
2.4
1.9
2. 8
V
V
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
Forward
Transconductance
V
CE
=25 V
I
C
= 3 A
1. 3
2.4
S
C
i es
C
o es
C
res
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
CE
= 25 V
f = 1 MHz
V
GE
= 0
160
23
4. 5
235
33
6.6
300
43
8. 6
pF
pF
pF
Q
G
Q
GE
Q
G C
Tot al G ate Charge
Gat e-Emitter Charge
Gat e-Collector Charge
V
CE
= 480 V
I
C
= 3 A
V
GE
= 15 V
21
6
7.6
27
nC
nC
nC
I
CL
Lat ching Current
V
clamp
= 480 V
R
G
=10
T
j
= 150
o
C
12
A
SWITCHING ON
Symbo l
Parameter
Test Co nditi ons
Min .
T yp.
Max.
Uni t
t
d(on)
t
r
Delay Time
Rise Time
V
CC
= 480 V
I
C
= 3 A
V
G E
= 15 V
R
G
= 10
16
30
ns
ns
(di/dt)
on
E
o n
(
r
)
Turn-on Current Slope
Turn-on Switching
Losses
V
CC
= 480 V
I
C
= 3 A
R
G
= 10
V
G E
= 15 V
T
j
= 125
o
C
400
77
A/
s
J
STGB3NB60HD
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
c
t
r
(v
off
)
t
d
(off)
t
f
E
o ff
(**)
E
ts
(
r
)
Cross-O ver Time
Off Volt age Rise Time
Delay Time
Fall T ime
Turn-off Swit ching Loss
Tot al Switching Loss
VCC = 480 V
I
C
= 3 A
R
G E
= 10
V
GE
= 15 V
90
36
53
70
33
100
ns
ns
ns
ns
J
J
t
c
t
r
(v
off
)
t
d
(off)
t
f
E
o ff
(**)
E
ts
(
r
)
Cross-O ver Time
Off Volt age Rise Time
Delay Time
Fall T ime
Turn-off Swit ching Loss
Tot al Switching Loss
VCC = 480 V
I
C
= 3 A
R
G E
= 10
V
GE
= 15 V
T
j
= 125
o
C
180
82
58
110
88
165
ns
ns
ns
ns
J
J
COLLECTOR-EMITTER DIODE
Symbo l
Parameter
T est Co ndi tio ns
Min.
T yp.
Max.
Un it
I
f
I
fm
Forward Current
Forward Current pulsed
3
24
A
A
V
f
Forward On-Voltage
I
f
= 3 A
I
f
= 3 A
T
j
= 125
o
C
1.6
1.4
2.0
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 3 A
V
R
=200 V
dI/dt = 100 A/
S
T
j
= 125
o
C
87
160
3.7
ns
nC
A
(
) Pulse width limited by max. junction temperature
(
r
) Include recovery losses on the STTA306 freewheeling diode
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
STGB3NB60HD
3/8
Output Characteristics
Transconductance
Collector-Emitter On Voltage vs Collector Current
Transfer Characteristics
Collector-Emitter On Voltage vs Temperature
Gate Threshold vs Temperature
STGB3NB60HD
4/8
Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Temperature
Capacitance Variations
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Collector Current
STGB3NB60HD
5/8
Switching Off Safe Operating Area
Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3 Switching Waveforms
STGB3NB60HD
6/8
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.4
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
L2
L3
L
B2
B
G
E
A
C2
D
C
A1
DETAIL "A"
DETAIL "A"
A2
P011P6/E
TO-263 (D
2
PAK) MECHANICAL DATA
STGB3NB60HD
7/8
Information furnished is believ ed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
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.
STGB3NB60HD
8/8