STGD3NB60H
N-CHANNEL 3A - 600V TO-252
PowerMESH
TM
IGBT
s
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s
LOW ON-VOLTAGE DROP (V
cesat
)
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
VERY HIGH FREQUENCY OPERATION
s
OFF LOSSES INCLUDE TAIL CURRENT
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
TM
IGBTs,
with
outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
June 1999
1
3
DPAK
TO-252
(Suffix "T4")
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Un it
V
CES
Collector-Emitter Volt age (V
G S
= 0)
600
V
V
ECR
Emitter-Collector Volt age
20
V
V
GE
G ate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at T
c
= 25
o
C
6
A
I
C
Collector Current (continuous) at T
c
= 100
o
C
3
A
I
CM
(
)
Collector Current (pulsed)
24
A
P
tot
T otal Dissipation at T
c
= 25
o
C
35
W
Derating Fact or
0. 28
W /
o
C
T
s tg
Storage T emperature
-65 t o 150
o
C
T
j
Max. Operating Junction Temperat ure
150
o
C
(
) Pulse width limited by safe operating area
TYPE
V
CES
V
CE(sat )
I
C
STGD3NB60H
600 V
< 2.8 V
3 A
1/8
THERMAL DATA
R
thj -case
R
thj -amb
R
thc-sink
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
3.57
100
1.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
j
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitt er
Breakdown Voltage
I
C
= 250
A
V
GE
= 0
600
V
I
CES
Collector cut-of f
(V
G E
= 0)
V
CE
= Max Rat ing
T
j
=
25
o
C
V
CE
= Max Rat ing
T
j
= 125
o
C
10
100
A
A
I
G ES
Gat e-Emitter Leakage
Current (V
CE
= 0)
V
GE
=
20 V
V
CE
= 0
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G E(th)
Gat e Threshold
Voltage
V
CE
= V
GE
I
C
= 250
A
3
5
V
V
CE(SAT )
Collector-Emitt er
Sat uration Voltage
V
GE
= 15 V
I
C
= 3 A
V
GE
= 15 V
I
C
= 3 A
T
j
= 125
o
C
2.4
1.9
2. 8
V
V
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
Forward
Transconductance
V
CE
=25 V
I
C
= 3 A
1. 3
2.4
S
C
i es
C
o es
C
res
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
CE
= 25 V
f = 1 MHz
V
GE
= 0
160
23
4. 5
235
33
6.6
300
43
8. 6
pF
pF
pF
Q
G
Q
GE
Q
G C
Tot al G ate Charge
Gat e-Emitter Charge
Gat e-Collector Charge
V
CE
= 480 V
I
C
= 3 A
V
GE
= 15 V
21
6
7.6
27
nC
nC
nC
I
CL
Lat ching Current
V
clamp
= 480 V
R
G
=10
T
j
= 150
o
C
12
A
SWITCHING ON
Symbo l
Parameter
Test Co nditi ons
Min .
T yp.
Max.
Uni t
t
d(on)
t
r
Delay Time
Rise Time
V
CC
= 480 V
I
C
= 3 A
V
G E
= 15 V
R
G
= 10
16
30
ns
ns
(di/dt)
on
E
o n
Turn-on Current Slope
Turn-on Switching
Losses
V
CC
= 480 V
I
C
= 3 A
R
G
= 10
V
G E
= 15 V
T
j
= 125
o
C
400
37
A/
s
J
STGD3NB60H
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
c
t
r
(v
off
)
t
d
(off)
t
f
E
o ff
(**)
E
ts
Cross-O ver Time
Off Volt age Rise Time
Delay Time
Fall T ime
Turn-off Swit ching Loss
Tot al Switching Loss
V
CC
= 480 V
I
C
= 3 A
R
G E
= 10
V
GE
= 15 V
90
36
53
70
33
65
ns
ns
ns
ns
J
J
t
c
t
r
(v
off
)
t
d
(off)
t
f
E
o ff
(**)
E
ts
Cross-O ver Time
Off Volt age Rise Time
Delay Time
Fall T ime
Turn-off Swit ching Loss
Tot al Switching Loss
V
CC
= 480 V
I
C
= 3 A
R
G E
= 10
V
GE
= 15 V
T
j
= 125
o
C
180
82
58
110
88
125
ns
ns
ns
ns
J
J
(
) Pulse width limited by max. junction temperature
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
STGD3NB60H
3/8
Output Characteristics
Transconductance
Collector-Emitter On Voltage vs Collector Current
Transfer Characteristics
Collector-Emitter On Voltage vs Temperature
Gate Threshold vs Temperature
STGD3NB60H
4/8
Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Temperature
Capacitance Variations
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Collector Current
STGD3NB60H
5/8
Switching Off Safe Operating Area
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3: Switching Waveforms
STGD3NB60H
6/8
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
0.031
L4
0.6
1
0.023
0.039
==
D
L2
L4
13
==
B
E
==
B2
G
2
A
C2
C
H
A1
DETAIL "A"
A2
DETAIL "A"
TO-252 (DPAK) MECHANICAL DATA
0068772-B
STGD3NB60H
7/8
Information furnished is believ ed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1999 STMicroelectronics Printed in Italy All Rights Reserved
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STGD3NB60H
8/8
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