STGE50NB60HD
N-CHANNEL 50A - 600V ISOTOP
PowerMESH
TM
IGBT
PRELIMINARY DATA
s
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s
LOW ON-VOLTAGE DROP (V
CESAT
)
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
VERY HIGH FREQUENCY OPERATION
s
OFF LOSSES INCLUDE TAIL CURRENT
s
CO-PACKAGED WITH TURBOSWITCH
TM
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
TM
IGBTs,
with
outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
WELDING EQUIPMENTS
s
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Volt age (V
G S
= 0)
600
V
V
GE
G ate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at T
c
= 25
o
C
100
A
I
C
Collector Current (continuous) at T
c
= 100
o
C
50
A
I
CM
(
)
Collector Current (pulsed)
400
A
P
tot
T otal Dissipation at T
c
= 25
o
C
300
W
Derating Fact or
2.4
W /
o
C
T
s tg
Storage T emperature
-65 t o 150
o
C
T
j
Max. Operating Junction Temperat ure
150
o
C
(
) Pulse width limited by safe operating area
T YPE
V
CES
V
CE(sat)
I
C
STGE50NB60HD
600 V
< 2.8 V
50 A
June 1999
ISOTOP
1/6
THERMAL DATA
R
thj -case
R
thj -amb
R
thc-h
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-heat sink
Typ
0.416
30
0.1
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
j
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitt er
Breakdown Voltage
I
C
= 250
A
V
GE
= 0
600
V
I
CES
Collector cut-of f
(V
G E
= 0)
V
CE
= Max Rat ing
T
j
=
25
o
C
V
CE
= Max Rat ing
T
j
= 125
o
C
100
1000
A
A
I
G ES
Gat e-Emitter Leakage
Current (V
CE
= 0)
V
GE
=
20 V
V
CE
= 0
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
G E(th)
Gat e Threshold
Voltage
V
CE
= V
GE
I
C
= 250
A
3
5
V
V
CE(SAT )
Collector-Emitt er
Sat uration Voltage
V
GE
= 15 V
I
C
= 50 A
V
GE
= 15 V
I
C
= 50 A
T
j
= 125
o
C
2.3
1.9
2. 8
V
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
f s
Forward
Transconductance
V
CE
=25 V
I
C
= 50 A
22
S
C
i es
C
o es
C
res
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
CE
= 25 V
f = 1 MHz
V
GE
= 0
4500
450
90
pF
pF
pF
Q
G
Q
GE
Q
G C
Tot al G ate Charge
Gat e-Emitter Charge
Gat e-Collector Charge
V
CE
= 480 V
I
C
= 50 A
V
GE
= 15 V
260
28
15
nC
nC
nC
I
CL
Lat ching Current
V
clamp
= 480 V
R
G
=10
T
j
= 150
o
C
200
A
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Delay Time
Rise Time
V
CC
= 480 V
I
C
= 50 A
V
GE
= 15 V
R
G
= 10
20
70
ns
ns
(di/dt)
on
E
o n
(
r
)
Turn-on Current Slope
Turn-on
Switching Losses
V
CC
= 480 V
I
C
= 50 A
R
G
= 10
V
GE
= 15 V
T
j
= 125
o
C
350
950
A/
s
J
STGE50NB60HD
2/6
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
t
r
(v
off
)
t
d
(
o ff
)
t
f
E
o ff
(**)
E
ts
(
r
)
Cross-O ver Time
Off Volt age Rise Time
Delay Time
Fall T ime
Turn-off Swit ching Loss
Tot al Switching Loss
V
CC
= 480 V
I
C
= 50 A
R
G E
= 10
V
GE
= 15 V
166
48
326
90
2.1
3
ns
ns
ns
ns
mJ
mJ
t
c
t
r
(v
off
)
t
d
(
o ff
)
t
f
E
o ff
(**)
E
ts
(
r
)
Cross-O ver Time
Off Volt age Rise Time
Delay Time
Fall T ime
Turn-off Swit ching Loss
Tot al Switching Loss
V
CC
= 480 V
I
C
= 50 A
R
G E
= 10
V
GE
= 15 V
T
j
= 125
o
C
270
75
340
200
2.9
3.85
ns
ns
ns
ns
mJ
mJ
COLLECTOR-EMITTER DIODE
Symbol
Parameter
T est Conditions
Min.
T yp.
Max.
Unit
I
f
I
fm
Forward Current
Forward Current pulsed
50
400
A
A
V
f
Forward On-Voltage
I
f
= 50 A
I
f
= 50 A
T
j
= 125
o
C
2
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 50 A
V
R
= 200 V
dI/dt = 100 A/
S
T
j
= 125
o
C
200
nS
nC
A
(
) Pulse width limited by max. junction temperature
(
r
) Include recovery losses on the STTA2006 freewheeling diode
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
STGE50NB60HD
3/6
Fig. 1: Gate Charge test Circuit
Fig. 3: Switching Waveforms
Fig. 2: Test Circuit For Inductive Load Switching
STGE50NB60HD
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.8
12.2
0.466
0.480
B
8.9
9.1
0.350
0.358
C
1.95
2.05
0.076
0.080
D
0.75
0.85
0.029
0.033
E
12.6
12.8
0.496
0.503
F
25.15
25.5
0.990
1.003
G
31.5
31.7
1.240
1.248
H
4
0.157
J
4.1
4.3
0.161
0.169
K
14.9
15.1
0.586
0.594
L
30.1
30.3
1.185
1.193
M
37.8
38.2
1.488
1.503
N
4
0.157
O
7.8
8.2
0.307
0.322
B
E
H
O
N
J
K
L
M
F
A
C
G
D
ISOTOP MECHANICAL DATA
STGE50NB60HD
5/6
Information furnished is believ ed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
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STGE50NB60HD
6/6
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