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December 2003
STGP12NB60K
N-CHANNEL 18A - 600V
TO-220
SHORT CIRCUIT PROOF PowerMESHTM IGBT
s
HIGH INPUT IMPEDANCE
s
LOW ON-LOSSES
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
OFF LOSSES INCLUDE TAIL CURRENT
s
VERY HIGH FREQUENCY OPERATION
s
TYPICAL SHORT CIRCUIT WITHSTAND TIME 10
MICROS
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH
TM
IGBTs, with outstanding performances. The
suffix "K" identifies a family optimized for high frequen-
cy applications (up to 50kHz) and short circuit proof in
order to achieve very high switching performances (re-
duced tfall) mantaining a low voltage drop.
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS
s
UPS
ORDERING INFORMATION
TYPE
V
CES
V
CE(sat)
(Max) @25C
I
C
(#)
@ 100C
STGP12NB60K
600 V
< 2.8
V
18 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGP12NB60K
GP12NB60K
TO-220
TUBE
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STGP12NB60K
2/9
ABSOLUTE MAXIMUM RATINGS
( )
Pulse width limited by safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Emitter-Collector Voltage
20
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at T
C
= 25C (#)
30
A
I
C
Collector Current (continuous) at T
C
= 100C (#)
18
A
I
CM
( )
Collector Current (pulsed)
60
A
Tsc
Short Circuit Withstand
10
s
P
TOT
Total Dissipation at T
C
= 25C
125
W
Derating Factor
1.0
W/C
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
Rthj-case
Thermal Resistance Junction-case Max
1.0
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
C
= 250 A, V
GE
= 0
600
V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 25 C
V
CE
= Max Rating, T
C
= 125 C
50
100
A
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250 A
5
7
V
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 12 A
V
GE
= 15V, I
C
= 12 A, Tj =125C
2.2
1.7
2.8
V
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
CE
= 25 V
,
I
C
= 12 A
5
S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
890
110
22
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, I
C
= 12 A,
V
GE
= 15V
54
8
31
nC
nC
nC
I
CL
Latching Current
V
clamp
= 480 V , V
GE
=15V
,
Tj = 125C , R
G
= 10
48
A
T
wsc
Short Circuit WITHSTAND
Time
V
CE
= 0.5 BV
ces ,
V
GE
= 15 V
Tj = 125C , R
G
= 10
10
s
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STGP12NB60K
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
(#) Calculated according to the iterative formula:
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
CC
= 480 V, I
C
= 12 A
R
G
= 10
, V
GE
= 15 V
25
ns
t
r
Rise Time
14.5
ns
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 480 V, I
C
= 12 A R
G
=10
V
GE
= 15 V,Tj = 125C
590
A/s
180
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 12 A,
R
GE
= 10
, V
GE
= 15 V
130
ns
t
r
(V
off
)
Off Voltage Rise Time
25
ns
t
d
(
off
)
Delay Time
96
ns
t
f
Fall Time
100
ns
E
off
(**)
Turn-off Switching Loss
258
J
E
ts
Total Switching Loss
410
J
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 12 A,
R
GE
= 10
, V
GE
= 15 V
Tj = 125 C
310
ns
t
r
(V
off
)
Off Voltage Rise Time
80
ns
t
d
(
off
)
Delay Time
150
ns
t
f
Fall Time
220
ns
E
off
(**)
Turn-off Switching Loss
650
J
E
ts
Total Switching Loss
830
J
I
C
T
C
(
)
T
JMAX
T
C
R
THJ
C
V
C ES AT MAX
(
)
T
C
I
C
,
(
)
--------------------------------------------------------------------------------------
=
STGP12NB60K
4/9
Collector-Emitter On Voltage vs Collector Current
Collector-Emitter On Voltage vs Temperature
Normalized Collector-Emitter On Voltage vs Temp.
Transconductance
Transfer Characteristics
Output Characteristics
5/9
STGP12NB60K
Total Switching Losses vs Temperature
Gate Charge vs Gate-Emitter Voltage
Capacitance Variations
Normalized Breakdown Voltage vs Temperature
Total Switching Losses vs Gate Resistance
Gate Threshold vs Temperature
STGP12NB60K
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Turn-Off SOA
Total Switching Losses vs Collector Current
Thermal Impedance
7/9
STGP12NB60K
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 1: Gate Charge test Circuit
STGP12NB60K
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DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
0.645
L30
28.90
1.137
P
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
TO-220 MECHANICAL DATA
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STGP12NB60K
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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