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June 2002
STGP7NB60K-STGP7NB60KFP-STGD7NB60K
STGP7NB60KD-STGP7NB60KDFP-STGB7NB60KD
N-CHANNEL 7A - 600V
- TO-220/FP/DPAK/D
2
PAK
PowerMESHTM IGBT
s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s
LOW ON-VOLTAGE DROP (V
cesat
)
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
OFF LOSSES INCLUDE TAIL CURRENT
s
FREQUENCY OPERATION
s
SHORT CIRCUIT RATED
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH
TM
IGBTs, with outstanding performances.
The suffix "K" identifies a family optimized for high
frequency motor control applications with short cir-
cuit withstand capability.
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS AND PFC IN BOTH HARD SWITCHING
AND RESONANT TOPOLOGIES
ORDERING INFORMATION
TYPE
V
CES
V
CE(sat)
(Typ) @125C
I
C
@125C
STGP7NB60K
STGD7NB60K
STGP7NB60KFP
STGP7NB60KD
STGP7NB60KDFP
STGB7NB60KD
600 V
600 V
600 V
600 V
600 V
600 V
< 2
V
< 2
V
< 2
V
< 2
V
< 2
V
< 2
V
7 A
7 A
7 A
7 A
7 A
7 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGP7NB60K
GP7NB60K
TO-220
TUBE
STGD7NB60KT4
GD7NB60K
DPAK
TAPE & REEL
STGP7NB60KFP
GP7NB60KFP
TO-220FP
TUBE
STGP7NB60KD
GP7NB60KD
TO-220
TUBE
STGP7NB60KDFP
GP7NB60KDFP
TO-220FP
TUBE
STGB7NB60KDT4
GB7NB60KD
D
2
PAK
TAPE & REEL
TO-220
1
2
3
1
3
1
2
3
1
3
TO-220FP
DPAK
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
Std. Version
"D" Version
STGP7NB60K/STGP7NB60KFP/STGD7NB60K/STGP7NB60KD/STGB7NB60KD/STGP7NB60KDFP
2/14
ABSOLUTE MAXIMUM RATINGS
(
n
) Pulse width limited by safe operating area
(1) For "D" version only
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
MAIN PARAMETERS
Symbol
Parameter
Value
Unit
TO-220
D
2
PAK
TO-220FP
DPAK
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Emitter-Collector Voltage
20
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at T
C
= 25C
14
14
14
A
I
C
Collector Current (continuous) at T
C
= 125C
7
7
7
A
I
CM
(
n
)
Collector Current (pulsed)
50
50
50
A
I
f
(1)
Forward Current
7
A
I
fm
(1)
Forward Current Pulsed
56
A
P
TOT
Total Dissipation at T
C
= 25C
95
30
90
W
Derating Factor
0.64
0.28
0.64
W/C
V
ISO
Insulation Withstand Voltage A.C.
--
2500
--
V
T
stg
Storage Temperature
55 to 150
150
C
T
j
Max. Operating Junction Temperature
TO-220
D
2
PAK
TO-220FP
DPAK
Rthj-case
Thermal Resistance Junction-case Max
1.32
4.17
1.4
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
100
C/W
Rthc-h
Thermal Resistance Case-heatsink Typ
0.5
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
C
= 250 A, V
GE
= 0
600
V
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 25 C
V
CE
= Max Rating, T
C
= 125 C
50
500
A
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250A
5
7
V
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 7 A
V
GE
= 15V, I
C
= 7 A, Tc =100C
2.3
1.9
2.8
V
V
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STGP7NB60K/STGP7NB60KFP/STGD7NB60K/STGP7NB60KD/STGB7NB60KD/STGP7NB60KDFP
SWITCHING PARAMETERS
COLLECTOR-EMITTER DIODE ("D" VERSION)
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
CE
= 25V, Ic = 7 A
TBD
S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
495
77
13
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, I
C
= 7 A,
V
GE
= 15V
32.7
5.9
18.3
45
nC
nC
nC
tscw
Short Circuit Withstand Time
V
ce
= 0.5 V
BR(CES)
, V
GE
=15V
,
Tc = 125C , R
G
= 10
10
s
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
CC
= 480 V, I
C
= 7 A
R
G
= 10
, V
GE
= 15 V
15
6
ns
ns
(di/dt)
on
Eon
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 480 V, I
C
= 7 A R
G
=10
V
GE
= 15 V,Tc = 125C
980
94
A/s
J
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
E
ts
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
V
cc
= 480 V, I
C
= 7 A,
R
GE
= 10
, V
GE
= 15 V
Tc = 25 C
85
20
75
100
85
235
ns
ns
ns
ns
J
J
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
E
ts
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
V
cc
= 480 V, I
C
= 7 A,
R
GE
= 10
, V
GE
= 15 V
Tc = 125 C
150
50
110
150
220
314
ns
ns
ns
ns
J
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
f
Forward On-Voltage
I
f
= 3.5 A
I
f
= 3.5 A, Tc = 125 C
1.4
1.15
1.9
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 7 A ,V
R
= 35 V,
Tc=125C, di/dt = 100A/
s
50
70
2.7
ns
nC
A
STGP7NB60K/STGP7NB60KFP/STGD7NB60K/STGP7NB60KD/STGB7NB60KD/STGP7NB60KDFP
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Transfer Characteristics
Output Characteristics
Transconductance
Gate Threshold vs Temperature
Collector-Emitter On Voltage vs Collector Current
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STGP7NB60K/STGP7NB60KFP/STGD7NB60K/STGP7NB60KD/STGB7NB60KD/STGP7NB60KDFP
Total Switching Losses vs Collector Current
Gate Charge vs Gate-Emitter Voltage
Capacitance Variations
Normalized Breakdown Voltage vs Temperature
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
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