1/11
May 2005
STGW20NB60KD
N-CHANNEL 20A - 600V
TO-247
SHORT CIRCUIT PROOF PowerMESHTM IGBT
Table 1: General Features
OFF LOSSES INCLUDE TAIL CURRENT
HIGH CURRENT CAPABILITY
HIGH INPUT IMPEDANCE (VOLTAGE
DRIVEN)
LOW ON-VOLTAGE DROP (V
cesat
)
LOW ON-LOSSES
LOW GATE CHARGE
VERY HIGH FREQUENCY OPERATION
SHORT CIRCUIT RATED
LATCH CURRENT FREE OPERATION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH
TM
IGBTs, with outstanding performances.
The suffix "K" identifies a family optimized for high
frequency motor control applications with short cir-
cuit withstand capability.
APPLICATIONS
HIGH FREQUENCY MOTOR CONTROLS
U.P.S
WELDING EQUIPMENTS
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
CES
V
CE(sat)
(Max)
@25C
I
C
@100C
STGW20NB60KD
600 V
< 2.8 V
25 A
1
2
3
TO-247
Weight: 4.41gr 0.01
Max Clip Pressure: 150 N/mm
2
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGW20NB60KD
GW20NB60KD
TO-247
TUBE
Rev. 3
STGW20NB60KD
2/11
Table 3: Absolute Maximum ratings
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Electrical Characteristics (T
case
=25C unless otherwise specified)
Table 5: Off
Table 6: On
(#) Calculated according to the iterative formula:
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Reverse Battery Protection
20
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at 25C (#)
50
A
I
C
Collector Current (continuous) at 100C (#)
25
A
I
CM
(1)
Collector Current (pulsed)
100
A
T
SC
Short Circuit Withstand
10
s
P
TOT
Total Dissipation at T
C
= 25C
170
W
Derating Factor
1.2
W/C
T
stg
Storage Temperature
55 to 150
C
T
j
Operating Junction Temperature
Min.
Typ.
Max.
Rthj-case
Thermal Resistance Junction-case
--
--
0.73
C/W
Rthj-amb
Thermal Resistance Junction-ambient
--
--
50
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
C
= 250 A, V
GE
= 0
600
V
I
CES
Collector-Emitter Leakage
Current (V
CE
= 0)
V
GE
= Max Rating
Tc=25C
Tc=125C
10
100
A
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20 V , V
CE
= 0
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250 A
5
7
V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
GE
= 15 V, I
C
= 20A, Tj= 25C
V
GE
= 15 V, I
C
= 20A,
Tj= 125C
2.3
1.9
2.8
V
V
I
C
T
C
(
)
T
J MAX
T
C
R
THJ
C
V
CE SAT M AX
(
) TC IC
,
(
)
--------------------------------------------------------------------------------------------------
=
3/11
STGW20NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On
2) Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17. If the IGBT is offered in a package with a co-pack
diode, the co-pack diode is used as external diode.
Table 9: Switching Off
(3)Turn-off losses include also the tail of the collector current.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
CE
= 25 V
,
I
C
= 20 A
8
S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
1560
190
38
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480 V, I
C
= 20 A,
V
GE
= 15V,
(see Figure 19)
85
14.4
51
115
nC
nC
nC
tscw
Short Circuit Withstand Time
V
ce
= 0.5 BV
ces
,
Tj = 125C
R
G
= 10
,
V
GE
= 15V
10
s
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Current Rise Time
V
CC
= 480 V, I
C
= 20 A
R
G
= 10
, V
GE
= 15V, Tj= 25C
(see Figure 17)
39
35
ns
ns
(di/dt)
on
Eon
(2)
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 480 V, I
C
= 20 A
R
G
= 10
, V
GE
= 15V, Tj= 125C
(see Figure 17)
453
675
A/s
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r
(V
off
)
Off Voltage Rise Time
V
cc
= 480 V, I
C
= 20 A,
R
GE
= 10
, V
GE
= 15 V
T
J
= 25 C
(see Figure 17)
25
ns
t
c
Cross-over Time
160
ns
t
d
(
off
)
Turn-off Delay Time
105
ns
t
f
Current Fall Time
95
ns
E
off
(3)
Turn-off Switching Loss
0.5
mJ
E
ts
Total Switching Loss
0.9
mJ
t
r
(V
off
)
Off Voltage Rise Time
V
cc
= 480 V, I
C
= 20 A,
R
GE
= 10
, V
GE
= 15 V
Tj = 125 C
(see Figure 17)
46
ns
t
c
Cross-over Time
175
ns
t
d
(
off
)
Turn-off Delay Time
130
ns
t
f
Current Fall Time
150
ns
E
off
(3)
Turn-off Switching Loss
0.70
mJ
E
ts
Total Switching Loss
1.35
mJ
STGW20NB60KD
4/11
Table 10: Collector-Emitter Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
f
I
fm
Forward Current
Forward Current pulsed
20
80
A
A
V
f
Forward On-Voltage
I
f
= 10 A
I
f
= 10 A, Tj = 125 C
1.27
1
2.0
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 10 A ,V
R
= 27 V,
Tj =125C, di/dt = 100 A/
s
(see Figure 20)
80.5
181
4.5
ns
nC
A
5/11
STGW20NB60KD
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 8: Normalized Gate Threshold vs Tem-
perature
STGW20NB60KD
6/11
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 10: Capacitance Variations
Figure 11: Turn-Off Energy Losses vs Temper-
ature
Figure 12: Gate Charge vs Gate-Emitter Volt-
age
Figure 13: Diode Forward Voltage
Figure 14: Total Switching Losses vs Collector
Current
7/11
STGW20NB60KD
Figure 15: Thermal Impedance
Figure 16: Turn-Off SOA
STGW20NB60KD
8/11
Figure 17: Test Circuit for Inductive Load
Switching
Figure 18: Switching Waveforms
Figure 19: Gate Charge Test Circuit
Figure 20: Diode Recovery Times Waveform
9/11
STGW20NB60KD
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
b2
3.0
3.40
0.118
0.134
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
0.620
e
5.45
0.214
L
14.20
14.80
0.560
0.582
L1
3.70
4.30
0.14
0.17
L2
18.50
0.728
P
3.55
3.65
0.140
0.143
R
4.50
5.50
0.177
0.216
S
5.50
0.216
TO-247 MECHANICAL DATA
STGW20NB60KD
10/11
Table 11: Revision History
Date
Revision
Description of Changes
21-Mar-2005
2
New stylesheet. Some value changed on Table 3 and 4
05-Apr-2005
3
New updated values in table 3
11/11
STGW20NB60KD
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