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January 2005
Table 1: General Features
n
LOW EQUIVALENT ON RESISTANCE
n
VERY FAST-SWITCH, UP TO 150 kHz
n
SQUARED RBSOA, UP TO 1500 V
n
VERY LOW C
ISS
DRIVEN BY RG = 47 W
APPLICATION
n
SINGLE SWITCH SMPS BASED ON THREE
PHASE MAINS
DESCRIPTION
The STC08DE150 is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed at
providing the best performance in ESBT topology.
The STC08DE150 is designed for use in aux
flyback smps for any three phase application.
Figure 1: Package
Figure 2: Internal Schematic Diagram
Table 2: Order Code
V
CS(ON)
I
C
R
CS(ON)
0.6 V
8 A
0.075 W
1
2
3
4
TO247-4L
Electrical Symbol Device Structure
Part Number
Marking
Package
Packaging
STC08DE150
C08DE150
TO247-4L
TUBE
STC08DE150
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR
ESBTTM 1500 V - 8 A - 0.075 W
PRELIMINARY DATA
Rev. 1
STC08DE150
2/9
Table 3: Absolute Maximum Ratings
Table 4: Thermal Data
Table 5: Electrical Characteristics (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Value
Unit
V
CS(SS)
Collector-Source Voltage (V
BS
= V
GS
= 0 V)
1500
V
V
BS(OS)
Base-Source Voltage (I
C
= 0, V
GS
= 0 V)
30
V
V
SB(OS)
Source-Base Voltage (I
C
= 0, V
GS
= 0 V)
9
V
V
GS
Gate-Source Voltage
20
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current (t
p
< 5ms)
15
A
I
B
Base Current
4
A
I
BM
Base Peak Current (t
p
< 1ms)
8
A
P
tot
Total Dissipation at T
C
= 25
o
C
155
W
T
stg
Storage Temperature
-65 to 125
C
T
J
Max. Operating Junction Temperature
125
C
Symbol
Parameter
Unit
R
thj-case
Thermal Resistance Junction-Case Max
0.64
o
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CS(SS)
Collector-Source Current
(V
BS
= V
GS
= 0 V)
V
CS(SS)
= 1500 V
100
mA
I
BS(OS)
Base-Source Current
(I
C
= 0 , V
GS
= 0 V)
V
BS(OS)
= 30 V
10
mA
I
SB(OS)
Source-Base Current
(I
C
= 0 , V
GS
= 0 V)
V
SB(OS)
= 9 V
100
mA
I
GS(OS)
Gate-Source Leakage
(V
BS
= 0 V)
V
GS
= 20 V
500
nA
V
CS(ON)
Collector-Source ON
Voltage
V
GS
= 10 V I
C
= 8 A I
B
= 1.6 A
V
GS
= 10 V I
C
= 5 A I
B
= 0.5 A
0.6
0.6
1.4
V
V
h
FE
DC Current Gain
I
C
= 8 A V
CS
= 1 V V
GS
= 10 V
I
C
= 5 A V
CS
= 1 V V
GS
= 10 V
4.5
8
7.5
10
V
BS(ON)
Base-Source ON Voltage
V
GS
= 10 V I
C
= 8 A I
B
= 1.6 A
V
GS
= 10 V I
C
= 5 A I
B
= 0.5 A
1.5
1
2
V
V
V
GS(th)
Gate Threshold Voltage
V
BS
= V
GS
I
B
= 250 mA
1.5
2.2
3
V
C
iss
Input Capacitance
V
CS
= 25 V f = 1 MHz V
GS
= V
CB
=0
750
pF
Q
GS(tot)
Gate-Source Charge
I
C
= 8 A V
GS
= 10 V
V
CS
= 25 V V
CB
= 0
12.5
nC
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
V
GS
= 10 V R
G
= 47 W
V
Clamp
= 1200 V t
p
= 4 ms
I
C
= 5 A I
B
= 0.5 A
526
8.5
ns
ns
V
CSW
Maximum Collector-Source
Voltage Switched Without
Snubber
R
G
= 47 W h
FE
= 5 A I
C
= 8 A
15
V
STC08DE150
3/9
V
CS(dyn)
Collector-Source Dynamic
Voltage
(500 ns)
V
CC
= V
Clamp
= 300 V V
GS
= 10 V
R
G
= 47 W I
C
= 4 A
I
B
= 0.8 A t
peak
= 500 ns
I
Bpeak
= 8 A (2 I
C
)
6
V
V
CS(dyn)
Collector-Source Dynamic
Voltage
(1ms)
V
CC
= V
Clamp
= 300 V V
GS
= 10 V
R
G
= 47 W I
C
= 4 A
I
B
= 0.8 A t
peak
= 500 ns
I
Bpeak
= 8 A (2 I
C
)
2.2
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
STC08DE150
4/9
Figure 3: Output Characteristics
Figure 4: Reverse Biased Safe Operating Area
Figure 5: DC Current Gain
Figure 6: Dynamic Collector-Emitter Satura-
tion Voltage
Figure 7: Gate Threshold Voltage vs Tempera-
ture
STC08DE150
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Figure 8: Collector-Source On Voltage
Figure 9: Base-Source On Voltage
Figure 10: Inductive Load Switching Time
Figure 11: Collector-Source On Voltage
Figure 12: Base-Source On Voltage
Figure 13: Inductive Load Switching Time
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