STN2NF06
N - CHANNEL 60V - 0.12
- 2A - SOT-223
STripFET
TM
POWER MOSFET
s
TYPICAL R
DS(on)
= 0.12
s
EXCEPTIONAL dv/dt CAPABILITY
s
AVALANCHE RUGGED TECHNOLOGY
s
100 % AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
"Single
Feature
Size
TM
" stip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL (DISK DRIVES,etc.)
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
I
D
ST N2NF06
60 V
< 0.15
2 A
July 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V
DS
Drain-source Voltage (V
G S
= 0)
60
V
V
DGR
Drain- gate Voltage (R
G S
= 20 k
)
60
V
V
GS
Gate-source Voltage
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
2
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
1.8
A
I
DM
(
)
Drain Current (pulsed)
8
A
P
to t
Total Dissipation at T
c
= 25
o
C
2.5
W
Derat ing Fact or
0.02
W/
o
C
dv/dt (
1
)
Peak Diode Recovery voltage slope
6
V/ ns
T
st g
St orage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction T emperat ure
150
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
8 A
,
di/dt
200 A/
s, V
DD
V
(BR)DSS
, T
j
T
JMAX
New RDS (on) spec. starting from JULY 98
1
2
2
3
SOT-223
1/9
THERMAL DATA
R
thj -pcb
R
t hj- amb
T
l
Thermal Resistance Junction-PC Board
Max
Thermal Resistance Junction-ambient
Max
(Surface Mount ed)
Maximum Lead Temperature For Soldering Purpose
50
60
260
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
I
AR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by T
j
max)
2
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
20
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
Drain-source
Breakdown Volt age
I
D
= 250
A
V
GS
= 0
60
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
G S
=
20 V
100
nA
ON (
)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
2
3
4
V
R
DS( on)
St atic Drain-source On
Resistance
V
G S
= 10 V
I
D
= 6A
0. 12
0.15
I
D(o n)
On St ate Drain Current
V
DS
> I
D(on)
x R
DS(on) max
V
G S
= 10 V
2
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
g
fs
(
)
Forward
Transconduct ance
V
DS
> I
D(on)
x R
DS(on) max
I
D
= 1 A
1
3
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0 V
760
100
30
pF
pF
pF
STN2NF06
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 30 V
I
D
= 6 A
R
G
= 4.7
V
G S
= 10 V
10
35
ns
ns
(di/ dt )
on
Turn-on Current Slope
V
DD
= 25 V
I
D
= 6 A
R
G
= 4.7
V
G S
= 10 V
200
A/
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 40 V
I
D
= 12 A
V
GS
= 10 V
20
5
7
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 48 V
I
D
= 12 A
R
G
= 4.7
V
GS
= 10 V
7
18
30
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
2
8
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 2 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 12 A
di/dt = 100 A/
s
V
DD
= 30 V
T
j
= 150
o
C
65
0. 18
5.5
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STN2NF06
3/9
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STN2NF06
4/9
Capacitance Variations
Normalized On Resistance vs Temperature
Turn-off Drain-source Voltage Slope
Normalized Gate Threshold Voltage vs
Temperature
Turn-on Current Slope
Cross-over Time
STN2NF06
5/9
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