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December 2001
.
STN2NF10
N-CHANNEL 100V - 0.23
- 2A SOT-223
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.23
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC-DC & DC-AC COVERTERS
s
DC MOTOR CONTROL (DISK DRIVERS, etc.)
s
SYNCHRONOUS RECTIFICATION
TYPE
V
DSS
R
DS(on)
I
D
STN2NF10
100 V
< 0.26
2 A
1
2
2
3
SOT-223
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(
)
Current limited by the package
(1) I
SD
1A, di/dt
300A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
100
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
100
V
V
GS
Gate- source Voltage
20
V
I
D
(
)
Drain Current (continuos) at T
C
= 25C
2
A
I
D
Drain Current (continuos) at T
C
= 100C
1.26
A
I
DM
(
)
Drain Current (pulsed)
8
A
P
tot
Total Dissipation at T
C
= 25C
2.5
W
Derating Factor
0.02
W/C
E
AS
(1)
Single Pulse Avalanche Energy
300
mJ
T
stg
Storage Temperature
-65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
INTERNAL SCHEMATIC DIAGRAM
STN2NF10
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(1)
DYNAMIC
Rthj-pcb
Rthj-pcb
T
l
Thermal Resistance Junction-PCB
(1 inch
2
copper board)
Thermal Resistance Junction-PCB (min. footprint)
Maximum Lead Temperature For Soldering Purpose
Typ
50
90
260
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
100
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
2
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 1 A
0.23
0.26
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
>I
D(on)
xR
DS(on)max
I
D
=1A
2.5
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
280
45
20
pF
pF
pF
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STN2NF10
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 50 V
I
D
= 1 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 3)
6
10
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 80V I
D
= 2A V
GS
=10V
10
2.5
4
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(Voff)
t
f
t
c
Turn-off Delay Time
Fall Time
Cross-over Time
V
clamp
= 80 V
I
D
= 2 A
R
G
= 4.7
,
V
GS
= 10 V
(Inductive Load, Figure 5)
19
4
15
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
2
8
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 2 A
V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 2 A
di/dt = 100A/s
V
DD
= 10 V
T
j
= 150C
(see test circuit, Figure 5)
70
175
5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STN2NF10
4/8
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/8
STN2NF10
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
.
.
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