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December 2002
.
STN3NF06L
N-CHANNEL 60V - 0.07
- 4A SOT-223
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.07
s
EXCEPTIONAL dv/dt CAPABILITY
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC-DC & DC-AC COVERTERS
s
DC MOTOR CONTROL (DISK DRIVERS, etc.)
s
SYNCHRONOUS RECTIFICATION
TYPE
V
DSS
R
DS(on)
I
D
STN3NF06L
60 V
< 0.1
4 A
1
2
2
3
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(
)
Current limited by the package
(1) I
SD
3A, di/dt
150A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 4A, V
DD
= 30V
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
16
V
I
D
(
)
Drain Current (continuous) at T
C
= 25C
4
A
I
D
Drain Current (continuous) at T
C
= 100C
2.9
A
I
DM
(
)
Drain Current (pulsed)
16
A
P
tot
Total Dissipation at T
C
= 25C
3.3
W
Derating Factor
0.026
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
10
V/ns
E
AS (2)
Single Pulse Avalanche Energy
200
mJ
T
stg
Storage Temperature
-55 to 150
C
T
j
Operating Junction Temperature
STN3NF06L
2/8
THERMAL DATA
(*)
When Mounted on FR-4 board with 1 inch
2
pad, 2 oz of Cu and t
[
10 sec
(**)
When Mounted on minimum footprint
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-pcb
Rthj-pcb
T
l
Thermal Resistance Junction-PCB (*)
Thermal Resistance Junction-PCB (**)
Maximum Lead Temperature For Soldering Purpose
(for 10 sec. 1.6 mm from case)
Max
Max
Typ
38
100
260
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
2.8
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 1.5 A
V
GS
= 5 V
I
D
= 1.5 A
0.07
0.085
0.10
0.12
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
= 15 V
I
D
= 1.5 A
3
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
340
63
30
pF
pF
pF
3/8
STN3NF06L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30 V
I
D
= 1.5 A
R
G
= 4.7
V
GS
= 5 V
(Resistive Load, Figure 3)
9
25
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48V I
D
= 3A V
GS
= 5V
7
1.5
2.8
9
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 30 V
I
D
= 1.5 A
R
G
= 4.7
,
V
GS
= 5 V
(Resistive Load, Figure 3)
20
10
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
4
16
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 4 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 4 A
di/dt = 100A/s
V
DD
= 25 V
T
j
= 150C
(see test circuit, Figure 5)
50
88
3.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STN3NF06L
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Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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STN3NF06L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
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