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December 2002
STN4NF03L
N-CHANNEL 30V - 0.039
- 6.5A SOT-223
STripFETTM II POWER MOSFET
(1) Starting T
j
=25C, I
D
=6.5A, V
DD
=15V
s
TYPICAL R
DS
(on) = 0.039
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power Mosfet is the latest development of STMi-
croelectronics unique "Single Feature SizeTM
"
strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
APPLICATIONS
s
DC-DC & DC-AC CONVERTERS
s
DC MOTOR CONTROL (DISK DRIVES, etc.)
s
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STN4NF03L
30V
<0.05
6.5A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
16
V
I
D
Drain Current (continuous) at T
C
= 25C
6.5
A
I
D
Drain Current (continuous) at T
C
= 100C
4.5
A
I
DM
( )
Drain Current (pulsed)
26
A
P
TOT
Total Dissipation at T
C
= 25C
3.3
W
Derating Factor
0.026
W/C
E
AS
(1)
Single Pulse Avalanche Energy
200
mJ
T
stg
Storage Temperature
55 to 175
C
T
j
Operating Junction Temperature
SOT-223
1
2
2
3
INTERNAL SCHEMATIC DIAGRAM
STN4NF03L
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THERMAL DATA
Note: (*) When mounted on 1 in
2
FR-4 board , 2 oz Cu, t<10s.
Note: (**) Minimum recommended footprint
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-PCB
Thermal Resistance Junction-PC Board Max (*)
38
C/W
Rthj-PCB
Thermal Resistance Junction-PCB Max (**)
100
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case for 10s)
260
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 2 A
0.039
0.05
V
GS
= 5 V, I
D
= 2 A
0.046
0.06
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 10 V , I
D
=2 A
1
3
S
C
iss
Input Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
330
pF
C
oss
Output Capacitance
90
pF
C
rss
Reverse Transfer
Capacitance
40
pF
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STN4NF03L
Thermal Impedence Junction-PCB
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 15 V, I
D
= 2 A
R
G
= 4.7
V
GS
= 4.5 V
(see test circuit, Figure 3)
11
ns
t
r
Rise Time
100
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24 V, I
D
= 4 A,
V
GS
= 10 V
6.5
3.6
2
9
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
Turn-off-Delay Time
V
DD
= 15 V, I
D
= 2 A,
R
G
= 4.7
,
V
GS
= 4.5 V
(see test circuit, Figure 3)
25
ns
t
f
Fall Time
22
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
6.5
26
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 6.5 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 6.5 A, di/dt = 100 A/s,
V
DD
= 15 V, T
j
= 150C
(see test circuit, Figure 5)
35
25
1.4
ns
nC
A
Safe Operating Area
STN4NF03L
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Output Characteristics
Static Drain-source On Resistance
Transfer Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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STN4NF03L
Source-drain Diode Forward Characteristics
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
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