STN888
HIGH CURRENT, HIGH PERFORMANCE,
LOW VOLTAGE PNP TRANSISTOR
s
VERY LOW COLLECTOR TO EMITTER
SATURATION VOLTAGE
s
D.C CURRENT GAIN, h
FE
> 100
s
5 A CONTINUOUS COLLECTOR CURRENT
s
SOT-223 PLASTIC PACKAGE FOR
SURFACE MOUNTING CIRCUITS
s
AVAILABLE IN TAPE AND REEL PACKING
APPLICATIONS
s
POWER MANAGEMENT IN PORTABLE
EQUIPMENT
s
VOLTAGE REGULATION IN BIAS SUPPLY
CIRCUITS
s
SWITCHING REGULATOR IN BATTERY
CHARGER APPLICATIONS
s
HEAVY LOAD DRIVER
DESCRIPTION
The device is manufactured in low voltage PNP
Planar Technology by using a "Base Island"
layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
INTERNAL SCHEMATIC DIAGRAM
March 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
-60
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
-30
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
-6
V
I
C
Collector Current
-5
A
I
CM
Collector Peak Current (t
p
< 5 ms)
-10
A
P
tot
Total Dissipation at T
amb
= 25
o
C
1.6
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
2
3
SOT-223
Ordering Code
Marking
STN888
N888
1/6
THERMAL DATA
R
t hj-a mb
Thermal Resistance Junction-Ambient Max
78
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -30 V
V
CB
= -30 V T
j
= 100
o
C
-10
-1
nA
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= -6 V
-10
nA
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= -10 mA
-30
V
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
I
C
= -100
A
-60
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= -100
A
-6
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= -500 mA I
B
= -5 mA
I
C
= -2 A I
B
= -50 mA
I
C
= -5 A I
B
= -250 mA
I
C
= -6 A I
B
= -250 mA
I
C
= -8 A I
B
= -400 mA
I
C
= -10 A I
B
= -500 mA
-0.15
-0.25
-0.70
-0.70
-1
-1.5
V
V
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= -2 A I
B
= -50 mA
I
C
= -6 A I
B
= -250 mA
-1.1
-1.4
V
V
h
FE
DC Current Gain
I
C
= -10 mA V
CE
= -1 V
I
C
= -500 mA V
CE
= -1 V
I
C
= -5 A V
CE
= -1 V
I
C
= -5 A V
CE
= -1V
T
j
= 100
o
C
I
C
= -8 A V
CE
= -1 V
I
C
= -10 A V
CE
= -1 V
150
150
75
75
40
15
200
200
100
100
55
35
300
t
d
t
r
t
s
t
f
RESISTIVE LOAD
Delay Time
RiseTime
StorageTime
Fall Time
I
C
= -3 A I
B1
= - I
B2
= -60 mA
V
CC
= -20 V (see figure 1)
180
160
250
80
220
210
300
100
ns
ns
ns
ns
Pulsed: Pulse duration = 300
s, duty cycle
1.5 %
STN888
2/6
Switching Times Resistive Load
Switching Times Resistive Load
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
DC Current Gain
STN888
3/6
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