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Электронный компонент: STP100NF04

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AUTOMOTIVE SPECIFIC
February 2002
STP100NF04
STB100NF04, STB100NF04-1
N-CHANNEL 40V - 0.0043
- 120A TO-220/D
2
PAK/I
2
PAK
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.0043
s
STANDARD THRESHOLD DRIVE
s
100% AVALANCHE TESTED
DESCRIPTION
This Power Mosfet is the latest development of ST-
Microelectronics unique "Single Feature Size
TM"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
SOLENOID AND RELAY DRIVERS
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP100NF04
STB100NF04
STB100NF04-1
40 V
40 V
40 V
< 0.0046
< 0.0046
<0.0046
120 A
120 A
120 A
300 W
300 W
300 W
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP100NF04
P100NF04
TO-220
TUBE
STB100NF04T4
B100NF04
D
2
PAK
TAPE & REEL
STB100NF04-1
B100NF04
I
2
PAK
TUBE
TO-220
1
2
3
I
2
PAK
1
3
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
STP100NF04, STB100NF04, STB100NF04-1
2/15
ABSOLUTE MAXIMUM RATINGS
(
l
) Pulse width limited by safe operating area
(1) I
SD
120A, di/dt
300A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(2) Starting T
j
= 25C, I
d
= 60A, V
DD
=30 V
(#) Current Limited by Package
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
40
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
40
V
V
GS
Gate- source Voltage
20
V
I
D
(#)
Drain Current (continuos) at T
C
= 25C
120
A
I
D
Drain Current (continuos) at T
C
= 100C
120
A
I
DM
(
l
)
Drain Current (pulsed)
480
A
P
TOT
Total Dissipation at T
C
= 25C
300
W
Derating Factor
2
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
6
V/ns
E
AS
(2)
Single Pulse Avalanche Energy
1.2
J
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 175
C
TO-220 / I
2
PAK / D
2
PAK
Rthj-case
Thermal Resistance Junction-case Max
0.5
C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max
See Curve on page 6
C/W
Rthj-amb
Thermal Resistance Junction-ambient (Free air) Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
40
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 50 A
0.0043
0.0046
3/15
STP100NF04, STB100NF04, STB100NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 50 A
150
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
5100
1300
160
pF
pF
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 20 V, I
D
= 60 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
35
220
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 32V, I
D
= 120 A,
V
GS
= 10V
(see, Figure 4)
110
35
35
150
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 20 V, I
D
= 60 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
80
50
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
120
480
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 120 A, V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 120 A, di/dt = 100A/s
V
DD
= 20V, T
j
= 150C
(see test circuit, Figure 5)
75
185
5
ns
nC
A
STP100NF04, STB100NF04, STB100NF04-1
4/15
Max Id Current vs Tc
Power Derating vs Tc
Transconductance
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
5/15
STP100NF04, STB100NF04, STB100NF04-1
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized On Resistance vs Temperature
Normalized Breakdown voltage vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics