Rev 2
September 2005
1/15
15
STB12NK80Z
STP12NK80Z - STW12NK80Z
N-CHANNEL 800V - 0.65
- 10.5A - TO220-DPAK-TO247
Zener-Protected SuperMESHTM MOSFET
General features
s
EXTREMELY HIGH dv/dt CAPABILITY
s
IMPROVED ESD CAPABILITY
s
100% AVALANCHE TESTED
s
GATE CHARGE MINIMIZED
s
VERY LOW INTRINSIC CAPACITANCES
s
VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established
strip-based PowerMESHTM layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
Order codes
Package
Internal schematic diagram
Type
V
DSS
R
DS(on)
I
D
Pw
STB12NK80Z
STP12NK80Z
STW12NK80Z
800 V
800 V
800 V
<0.75
<0.75
<0.75
10.5 A
10.5 A
10.5 A
190 W
190 W
190 W
1
2
3
TO-220
DPAK
1
2
3
TO-247
1
3
Sales Type
Marking
Package
Packaging
STB12NK80ZT4
B12NK80Z
DPAK
TAPE & REEL
STP12NK80Z
P12NK80Z
TO-220
TUBE
STW12NK80Z
W12NK80Z
TO-247
TUBE
www.st.com
1 Electrical ratings
STB12NK80Z - STP12NK80Z - STW12NK80Z
2/15
1 Electrical
ratings
Table 1.
Absolute maximum ratings
Table 2.
Thermal data
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
V
DS
Drain-Source Voltage (V
GS
= 0)
800
V
V
DGR
Drain-gate Voltage (R
GS
= 20k
)
800
V
V
GS
Gate-Source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
10.5
A
I
D
Drain Current (continuous) at T
C
= 100C
6.6
A
I
DM
Note
2
Drain Current (pulsed)
42
A
P
TOT
Total Dissipation at T
C
= 25C
190
W
Derating Factor
1.51
W/C
Vesd(G-S)
G-S ESD (HBM C=100pF, R=1.5k
)
6000
V
dv/dt
Note
1
Peak Diode Recovery voltage slope
4.5
V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
C
TO-220/DPAK
TO-247
Unit
Rthj-case
Thermal Resistance Junction-case Max
0.66
C/W
Rthj-amb
Thermal Resistance Junction-amb Max
62.5
50
C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
10.5
A
E
AS
Single Pulse Avalanche Energy
(starting Tj=25C, I
D
=I
AR
, V
DD
= 50V)
400
mJ
STB12NK80Z - STP12NK80Z - STW12NK80Z
2 Electrical characteristics
3/15
2 Electrical
characteristics
(T
CASE
= 25 C unless otherwise specified)
Table 4.
On/off states
Table 5.
Dynamic
Table 6.
Switching times
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-Source Breakdown
Voltage
I
D
= 1mA, V
GS
= 0
800
V
I
DSS
Zero Gate Voltage Drain
Current (V
GS
= 0)
V
DS
= Max Rating,
V
DS
= Max Rating,Tc = 125C
1
50
A
A
I
GSS
Gate Body Leakage Current
(V
DS
= 0)
V
GS
= 20V
10
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100 A
3
3.75
4.5
V
R
DS(on)
Static Drain-Source On
Resistance
V
GS
= 10 V, I
D
= 4.5 A
0.65
0.75
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Note
4
Forward Transconductance
V
DS
=15V, I
D
= 5.25A
12
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
2620
250
53
pF
pF
pF
C
oss eq.
Note
5
Equivalent Ouput Capacitance V
GS
=0, V
DS
=0V to 640V
100
pF
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=640V, I
D
= 10.5 A
V
GS
=10V
(see Figure 17)
87
14
44
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
=400 V, I
D
=5.25 A,
R
G
=4.7
,
V
GS
=10V
(see Figure 18)
30
18
ns
ns
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
=400 V, I
D
=5.25A,
R
G
=4.7
,
V
GS
=10V
(see Figure 18)
70
20
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
=640 V, I
D
=10.5A,
R
G
=4.7
,
V
GS
=10V
(see Figure 18)
16
15
28
ns
ns
ns
2 Electrical characteristics
STB12NK80Z - STP12NK80Z - STW12NK80Z
4/15
Table 7.
Source drain diode
Table 8.
Gate-source zener diode
(1) I
SD
10.5 A, di/dt
200A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300s, duty cycle 1.5%
(5) C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0
to 80%V
DSS
(6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but
also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this
respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Note
2
Source-drain Current
Source-drain Current (pulsed)
10.5
42
A
A
V
SD
Note
4
Forward on Voltage
I
SD
=10.5 A, V
GS
=0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=10.5A, di/dt = 100A/s,
V
DD
=100 V, Tj=150C
635
5.9
18.5
ns
C
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Note
6
Gate-Source
Breakdown Voltage
Igs=1mA
(Open Drain)
30
V
STB12NK80Z - STP12NK80Z - STW12NK80Z
2 Electrical characteristics
5/15
2.1
Electrical Characteristics (curves)
Figure 1.
Safe Operating Area for
TO-220/DPAK
Figure 2.
Thermal Impedance for
TO-220/DPAK
Figure 3.
Safe Operating Area for TO-247
Figure 4.
Thermal Impedance for TO-247
Figure 5.
Output Characteristics
Figure 6.
Transfer Characteristics
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