1/11
December 2004
STB140NF55
STP140NF55
N-CHANNEL 55V - 0.0065
- 80A TO-220/DPAK
STripFETTM II POWER MOSFET
Figure 1:Package
Table 1: General Features
TYPICAL R
DS
(on) = 0.0065
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
MOTOR CONTROL
HIGH CURRENT, SWITCHING
APPLICATIONS
AUTOMOTIVE ENVIRONMENT
TYPE
V
DSS
R
DS(on)
I
D
STB140NF55
STP140NF55
55 V
55 V
< 0.008
< 0.008
80 A
80 A
1
2
3
TO-220
1
3
D
2
PAK
TO-263
(Suffix "T4")
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
Table 3:ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) I
SD
80A, di/dt
300A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 30V
Part Number
MARKING
PACKAGE
PACKAGING
STB140NF55T4
STP140NF55
B140NF55
P140NF55
DPAK
TO-220
TAPE & REEL
TUBE
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
55
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
80
A
I
D
Drain Current (continuous) at T
C
= 100C
80
A
I
DM
(
)
Drain Current (pulsed)
320
A
P
tot
Total Dissipation at T
C
= 25C
300
W
Derating Factor
2
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
10
V/ns
E
AS
(2)
Single Pulse Avalanche Energy
1.3
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
Rev.
2
STB140NF55 STP140NF55
2/11
Table 4: THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
Table 5: OFF
Table 6: ON
(*)
Table 7: DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
0.5
62.5
300
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
55
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 40 A
0.0065
0.008
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS =
25 V
I
D
= 40 A
100
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz V
GS
= 0
5300
1000
290
pF
pF
pF
3/11
STB140NF55 STP140NF55
Table 8: SWITCHING ON
Table 9: SWITCHING OFF
Table 10: SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 27.5 V
I
D
= 40 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 3)
30
150
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 44V I
D
= 80A V
GS
= 10V
142
27
55
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 27.5 V
I
D
= 40 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 3)
125
45
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 80 A V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80 A
di/dt = 100A/s
V
DD
= 20 V
T
j
= 150C
(see test circuit, Figure 5)
90
275
6.5
ns
C
A
ELECTRICAL CHARACTERISTICS (continued)
Figure 4: Thermal Impedance
Figure 3: Safe Operating Area
STB140NF55 STP140NF55
4/11
Figure 5: Output Characteristics
Figure 6: Transfer Characteristics
Figure 7: Transconductance
Figure 8: Static Drain-source On Resistance
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Capacitance Variations
5/11
STB140NF55 STP140NF55
Figure 14: Normalized Breakdown Voltage vs
Temperature.
.
.
.
Figure 11: Normalized Gate Threshold Voltage vs
Temperature
Figure 12: Normalized on Resistance vs Temperature
Figure 13: Source-drain Diode Forward
Characteristics
.
STB140NF55 STP140NF55
6/11
Figure 15:
Unclamped Inductive Load Test Cir-
cuit
Figure 17:
Switching Times Test Circuits For Resis-
tive Load
Figure 16:
Unclamped Inductive Waveform
Figure 18:
Gate Charge test Circuit
Figure 19: Test Circuit For Inductive Load Switching
And Diode Recovery Time
s
7/11
STB140NF55 STP140NF55
DIM.
mm.
inch.
MIN.
TYP. MAX.
MIN.
TYP. TYP.
A
4.4
4.6
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.40
0.645
L3
28.90
1.137
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
DIA
3.75
3.85
0.147
0.151
TO-220 MECHANICAL DATA
STB140NF55 STP140NF55
8/11
DIM.
mm.
inch.
MIN.
TYP. MAX.
MIN.
TYP. TYP.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.028
0.037
B2
1.14
1.7
0.045
0.067
C
0.45
0.6
0.018
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.394
0.409
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.069
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
8
0
8
D
2
PAK MECHANICAL DATA
9/11
STB140NF55 STP140NF55
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0075
0.082
R
50
1.574
T
0.25
0.35
.0.0098
0.0137
W
23.7
24.3
0.933
0.956
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0.795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
* on sales type
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
D
2
PAK FOOTPRINT
TAPE MECHANICAL DATA
STB140NF55 STP140NF55
10/11
Table 11:Revision History
Date
Revision
Description of Changes
07-Nov-2004
2
updated fig.14
11/11
STB140NF55 STP140NF55
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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