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Электронный компонент: STP140NF75

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AUTOMOTIVE SPECIFIC
December 2002
STB140NF75 STP140NF75
STB140NF75-1
N-CHANNEL 75V - 0.0065
-120A DPAK/IPAK/TO-220
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.0065
s
SURFACE-MOUNTING D
PAK (TO-263)
POWER PACKAGE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
SOLENOID AND RELAY DRIVERS
s
AUTOMOTIVE 42V BATTERY DRIVERS
TYPE
V
DSS
R
DS(on)
I
D
STB140NF75
STP140NF75
STB140NF75-1
75 V
75 V
75 V
<0.0075
<0.0075
<0.0075
120 A
(**)
120 A
(**)
120 A
(**)
1
2
3
1
3
D
2
PAK
TO-263
(Suffix "T4")
TO-220
1
2
3
I
2
PAK
TO-262
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) I
SD
120A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60 A, V
DD
= 30V
SALES TYPE
MARKING
PACKAGE
PACKAGING
STB140NF75T4
B140NF75
D
2
PAK
TAPE & REEL
STP140NF75
P140NF75
TO-220
TUBE
STB140NF75-1
B140NF75
I
2
PAK
TUBE
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
75
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
75
V
V
GS
Gate- source Voltage
20
V
I
D
(**)
Drain Current (continuous) at T
C
= 25C
120
A
I
D
Drain Current (continuous) at T
C
= 100C
100
A
I
DM
(
)
Drain Current (pulsed)
480
A
P
tot
Total Dissipation at T
C
= 25C
310
W
Derating Factor
2.08
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
10
V/ns
E
AS (2)
Single Pulse Avalanche Energy
750
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
STB140NF75 STP140NF75 STB150NF75-1
2/14
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case
Max
0.48
C/W
Rthj-amb
Thermal Resistance Junction-ambient
Max
62.5
C/W
Rthj-pcb
Thermal Resistance Junction-pcb
Max
see curve on page 6
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
(for 10 sec. 1.6 mm from case)
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A
V
GS
= 0
75
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
2
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 70 A
0.0065
0.0075
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS =
15 V
I
D
= 70 A
160
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
5000
960
310
pF
pF
pF
3/14
STB140NF75 STP140NF75 STB150NF75-1
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 38 V
I
D
= 70 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 3)
30
140
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=60 V I
D
=120A V
GS
= 10V
(see test circuit, Figure 4)
160
28
70
218
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 38 V
I
D
= 70 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 3)
130
90
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
120
480
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 120 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 120 A
di/dt = 100A/s
V
DD
= 35 V
T
j
= 150C
(see test circuit, Figure 5)
115
450
8
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Thermal Impedance
Safe Operating Area
STB140NF75 STP140NF75 STB150NF75-1
4/14
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/14
STB140NF75 STP140NF75 STB150NF75-1
.
.
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
Power Derating vs Tc
Max Id Current vs Tc
.
STB140NF75 STP140NF75 STB150NF75-1
6/14
Allowable Iav vs. Time in Avalanche
Thermal Resistance Rthj-a vs PCB Copper Area
Max Power Dissipation vs PCB Copper Area
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:
P
D(AVE)
= 0.5 * (1.3 * BV
DSS
* I
AV
)
E
AS(AR)
= P
D(AVE)
* t
AV
Where:
I
AV
is the Allowable Current in Avalanche
P
D(AVE)
is the Average Power Dissipation in Avalanche (Single Pulse)
t
AV
is the Time in Avalanche
To derate above 25
o
C, at fixed I
AV
, the following equation must be applied:
I
AV
= 2 * (T
jmax
- T
CASE
)/ (1.3 * BV
DSS
* Z
th
)
Where:
Z
th
= K * R
th
is the value coming from Normalized Thermal Response at fixed pulse width equal to T
AV
.
7/14
STB140NF75 STP140NF75 STB150NF75-1
Parameter
Node
Value
CTHERM1
7 - 6
1.49 * 10
-3
CTHERM2
6 - 5
3.50 * 10
-2
CTHERM3
5 - 4
5.94 * 10
-2
CTHERM4
4 - 3
9.74 * 10
-2
CTHERM5
3 - 2
8.86 * 10
-2
CTHERM6
2 - 1
8.27 * 10
-1
RTHERM1
7 - 6
0.0384
RTHERM2
6 - 5
0.0624
RTHERM3
5 - 4
0.072
RTHERM4
4 - 3
0.0912
RTHERM5
3 - 2
0.1008
RTHERM6
2 - 1
0.1152
SPICE THERMAL MODEL
STB140NF75 STP140NF75 STB150NF75-1
8/14
Fig. 4.1: Gate Charge Test Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 3.1: Switching Time Waveform
Fig. 4: Gate Charge Test Circuit
9/14
STB140NF75 STP140NF75 STB150NF75-1
Fig. 5: Diode Switching Test Circuit
Fig. 5.1: Diode Recovery Times Waveform
STB140NF75 STP140NF75 STB150NF75-1
10/14
DIM.
mm.
inch.
MIN.
TYP. MAX.
MIN.
TYP. TYP.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.028
0.037
B2
1.14
1.7
0.045
0.067
C
0.45
0.6
0.018
0.024
C2
1.21
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.394
0.409
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.591
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.069
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
8
0
8
D
PAK MECHANICAL DATA
11/14
STB140NF75 STP140NF75 STB150NF75-1
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
L
L1
B2
B
D
E
A
C2
C
A1
L2
e
P011P5/E
TO-262 (I
2
PAK) MECHANICAL DATA
STB140NF75 STP140NF75 STB150NF75-1
12/14
DIM.
mm.
inch.
MIN.
TYP. MAX.
MIN.
TYP. TYP.
A
4.4
4.6
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.40
0.645
L3
28.90
1.137
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
DIA
3.75
3.85
0.147
0.151
TO-220 MECHANICAL DATA
13/14
STB140NF75 STP140NF75 STB150NF75-1
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0075
0.082
R
50
1.574
T
0.25
0.35
.0.0098
0.0137
W
23.7
24.3
0.933
0.956
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0.795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
* on sales type
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
D
2
PAK FOOTPRINT
TAPE MECHANICAL DATA
STB140NF75 STP140NF75 STB150NF75-1
14/14
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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