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August 2002
STP14NF12
STP14NF12FP
N-CHANNEL 120V - 0.16
- 14A TO-220/TO-220FP
LOW GATE CHARGE STripFETTM POWER MOSFET
(1) I
SD
14A, di/dt
300A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(2) Starting T
j
= 25C, I
D
= 14A, V
DD
= 50V
s
TYPICAL R
DS
(on) = 0.16
s
EXCEPTIONAL dv/dt CAPABILITY
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP14NF12
STP14NF12FP
120 V
120 V
< 0.18
< 0.18
14 A
14 A
Symbol
Parameter
Value
Unit
STP14NF12
STP14NF12FP
V
DS
Drain-source Voltage (V
GS
= 0)
120
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
120
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
14
8.5
A
I
D
Drain Current (continuous) at T
C
= 100C
9
6
A
I
DM
( )
Drain Current (pulsed)
56
34
A
P
TOT
Total Dissipation at T
C
= 25C
60
25
W
Derating Factor
0.4
0.17
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
9
V/ns
E
AS
(2)
Single Pulse Avalanche Energy
60
mJ
V
ISO
Insulation Withstand Voltage (DC)
-
2500
V
T
j
Operating Junction Temperature
-55 to 175
C
T
stg
Storage Temperature
TO-220
1
2
3
1
2
3
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
STP14NF12/STP14NF12FP
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
2.5
6
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
120
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 7 A
0.16
0.18
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15V
,
I
D
= 7 A
4
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
460
pF
C
oss
Output Capacitance
70
pF
C
rss
Reverse Transfer
Capacitance
30
pF
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STP14NF12/STP14NF12FP
Safe Operating Area For TO-220
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 50 V, I
D
= 7 A
R
G
= 4.7
V
GS
= 10V
(Resistive Load, see Figure 3)
16
ns
t
r
Rise Time
25
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 80 V, I
D
= 14 A,
V
GS
= 10V
15.5
3.7
4.7
21
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 50 V, I
D
= 7 A,
R
G
= 4.7
,
V
GS
= 10V
(Resistive Load, see Figure 3)
32
8
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
14
A
I
SDM
(2)
Source-drain Current (pulsed)
56
A
V
SD
(1)
Forward On Voltage
I
SD
= 14 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 14 A, di/dt = 100A/s,
V
DD
= 50 V, T
j
= 150C
(see test circuit, Figure 5)
92
230
5
ns
nC
A
Safe Operating Area For TO-220FP
STP14NF12/STP14NF12FP
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Thermal Impedance For TO-220FP
Output Characteristics
Static Drain-source On Resistance
Thermal Impedance For TO-220
Transfer Characteristics
Transconductance
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STP14NF12/STP14NF12FP
Normalized BVDSS vs Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs Temp.
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