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September 2005
STP16NK65Z
STB16NK65Z-S
N-CHANNEL 650V - 0.38
- 13A TO-220 / I
2
SPAK
Zener - Protected SuperMESHTM MOSFET
Table 1: General Features
s
TYPICAL R
DS
(on) = 0.38
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
GATE CHARGE MINIMIZED
s
VERY LOW INTRINSIC CAPACITANCES
s
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established
stripbased PowerMESHTM layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capabil-
ity for the most demanding applications. Such se-
ries complements ST full range of high voltage
MOSFETs including revolutionary MDmeshTM
products.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
IDEAL FOR OFF-LINE POWER SUPPLIES
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP16NK65Z
STB16NK65Z-S
650 V
650 V
< 0.50
< 0.50
13 A
13 A
190 W
190 W
1
2
3
1
2
3
ISPAK
TO-220
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP16NK65Z
P16NK65Z
TO-220
TUBE
STB16NK65Z-S
B16NK65Z
ISPAK
TUBE
Rev. 3
STP16NK65Z - STB16NK65Z-S
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Table 3: Absolute Maximum ratings
(*) Pulse width limited by safe operating area
(1) I
SD
13 A, di/dt
200 A
/
s, V
DD
V
(BR)DSS
,T
j
T
JMAX
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied fromgate to source. In this respect the Zener voltage ia appropriate to achieve an efficient and
cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
650
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
650
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
13
A
I
D
Drain Current (continuous) at T
C
= 100C
8.19
A
I
DM
(*)
Drain Current (pulsed)
52
A
P
TOT
Total Dissipation at T
C
= 25C 190
W
Derating Factor
1.51
W/C
V
ESD(G-S)
Gate source EDS (HBM-C=100pF, R=1.5k
)
6000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
C
Rthj-case
Thermal Resistance Junction-case Max
0.66
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max. Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
13
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
350
mJ
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs= 1mA (Open Drain)
30
V
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STP16NK65Z - STB16NK65Z-S
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300s, duty cycle 1.5%
(2) Pulse width limited by safe operating area
(*) C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1 mA, V
GS
= 0
650
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
10
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100 A
3
3.75
4.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 6.5 A
0.38
0.50
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 6.5 A
12
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
2750
275
60
pF
pF
pF
C
oss eq.
(*)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 6.5 V to 520 V
188
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 325 V, I
D
= 6.5 A
R
G
= 4.7
V
GS
= 10 V
(see Figure 17)
25
25
68
17
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 520 V, I
D
= 13 A,
V
GS
= 10 V
(see Figure 20)
89
18
45
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
13
52
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 13 A, V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 13 A, di/dt = 100 A/s,
V
DD
= 100 V, T
j
= 25C
(see Figure 18)
500
5.2
21
ns
C
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 13 A, di/dt = 100 A/s,
V
DD
= 100 V, T
j
= 150C
(see Figure 18)
615
7
22.5
ns
C
A
STP16NK65Z - STB16NK65Z-S
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Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance
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STP16NK65Z - STB16NK65Z-S
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 11: Dource-Drain Diode Forward Char-
acteristics
Figure 12: Capacitance Variations
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 14: Normalized BVdss vs Temperature
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