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May 2002
STP16NS25
STP16NS25FP
N-CHANNEL 250V - 0.23
- 16A TO-220 / TO-220FP
MESH OVERLAYTM MOSFET
(1) I
SD
16A, di/dt
300 A/
s, V
DD
V
(BR)DSS
, Tj
T
jMAX
(*) Limited only by maximum temperature allowed
INTERNAL SCHEMATIC DIAGRAM
s
TYPICAL R
DS
(on) = 0.23
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company's proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
s
IDEAL FOR MONITOR's B+ FUNCTION
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP16NS25
STP16NS25FP
250 V
250 V
< 0.28
< 0.28
16 A
16 A
Symbol
Parameter
Value
Unit
STP16NS25
STP16NS25FP
V
DS
Drain-source Voltage (V
GS
= 0)
250
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
250
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuos) at T
C
= 25C
16
16(*)
A
I
D
Drain Current (continuos) at T
C
= 100C
11
11(*)
A
I
DM
(
l
)
Drain Current (pulsed)
64
64(*)
A
P
TOT
Total Dissipation at T
C
= 25C
140
40
W
Derating Factor
1
0.33
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
5
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
TO-220
1
2
3
1
2
3
TO-220FP
STP16NS25 - STP16NS25FP
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
TO-220
TO-220FP
C/W
Rthj-case
Thermal Resistance Junction-case Max
0.9
3
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
16
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
600
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
250
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 8 A
0.23
0.28
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 8 A
15
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1270
pF
C
oss
Output Capacitance
190
pF
C
rss
Reverse Transfer
Capacitance
74
pF
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STP16NS25 - STP16NS25FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 125 V, I
D
= 8 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
14.5
ns
t
r
Rise Time
26
ns
Q
g
Total Gate Charge
V
DD
= 200V, I
D
= 16 A,
V
GS
= 10V
59
83
nC
Q
gs
Gate-Source Charge
7.9
nC
Q
gd
Gate-Drain Charge
22.3
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(Voff)
t
f
Turn-off- Delay Time
Fall Time
V
DD
= 125V, I
D
= 8 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
72
32
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 200V, I
D
= 16 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
24
28
56
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
16
A
I
SDM
(2)
Source-drain Current (pulsed)
64
A
V
SD
(1)
Forward On Voltage
I
SD
= 16 A, V
GS
= 0
1.5
V
t
rr
Reverse Recovery Time
I
SD
= 16 A, di/dt = 100A/s
V
DD
= 30V, T
j
= 150C
(see test circuit, Figure 5)
270
ns
Q
rr
Reverse Recovery Charge
1.5
C
I
RRM
Reverse Recovery Current
11.4
A
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220
STP16NS25 - STP16NS25FP
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Thermal Impedance for TO-220FP
Thermal Impedance for TO-220
Transconductance
Static Drain-source On Resistance
Transfer Characteristics
Output Characteristics
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STP16NS25 - STP16NS25FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
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