1/12
August 2002
STP19NB20 - STP19NB20FP
STB19NB20-1
N-CHANNEL 200V - 0.15
- 19A - TO-220/TO-220FP/I
2
PAK
PowerMESHTM MOSFET
(1)I
SD
19 A, di/dt
300A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
s
TYPICAL R
DS
(on) = 0.15
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP19NB20
STP19NB20FP
STB19NB20-1
200 V
200 V
200 V
< 0.18
< 0.18
< 0.18
19 A
10 A
19 A
Symbol
Parameter
Value
Unit
STP(B)19NB20(-1)
STP19NB20FP
V
DS
Drain-source Voltage (V
GS
= 0)
200
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
200
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
19
10
A
I
D
Drain Current (continuous) at T
C
= 100C
12
6.0
A
I
DM
(
l
)
Drain Current (pulsed)
76
76
A
P
TOT
Total Dissipation at T
C
= 25C
125
35
W
Derating Factor
1
0.28
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
5.5
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-220
1
2
3
TO-220FP
1
2
3
I
2
PAK
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
STP19NB20/FP/STB19NB20-1
2/12
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
TO-220/I
2
PAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1
3.57
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
19
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
580
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
200
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 9.5 A
0.15
0.18
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 9.5 A
3
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1000
pF
C
oss
Output Capacitance
285
pF
C
rss
Reverse Transfer
Capacitance
45
pF
3/12
STP19NB20/FP/STB19NB20-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 100V, I
D
= 9.5 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
15
ns
t
r
Rise Time
15
ns
Q
g
Total Gate Charge
V
DD
= 160V, I
D
= 19 A,
V
GS
= 10V
29
40
nC
Q
gs
Gate-Source Charge
9.5
nC
Q
gd
Gate-Drain Charge
13
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 160V, I
D
= 19 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
10
ns
t
f
Fall Time
10
ns
t
c
Cross-over Time
20
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
19
A
I
SDM
(2)
Source-drain Current (pulsed)
76
A
V
SD
(1)
Forward On Voltage
I
SD
= 19 A, V
GS
= 0
1.5
V
t
rr
Reverse Recovery Time
I
SD
= 19 A, di/dt = 100A/s,
V
DD
= 50V, T
j
= 150C
(see test circuit, Figure 5)
210
ns
Q
rr
Reverse Recovery Charge
1.5
C
I
RRM
Reverse Recovery Current
14.5
A
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220/I
2
PAK
STP19NB20/FP/STB19NB20-1
4/12
Output Characteristics
Tranconductance
Tranfer Characteristics
Thermal Impedance for TO-220/I
2
PAK
Thermal Impedance for TO-220FP
Static Drain-Source On Resistance
5/12
STP19NB20/FP/STB19NB20-1
Normalized On Resistance vs Temperature
Capacitance Variations
Gate Charge vs Gate-source Voltage
Source-drain Diode Forward Characteristics
Normalized Gate Thereshold Voltage vs Temp.
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