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October 2004
STP200NF04
STB200NF04 - STB200NF04-1
N-CHANNEL 40V
- 120 A - 3.3 m
TO-220/DPAK/IPAK
STripFETTMII MOSFET
Table 1: General Features
s
STANDARD THRESHOLD DRIVE
s
100% AVALANCHE TESTED
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
AUTOMOTIVE
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
Type
V
DSS
R
DS(on)
I
D
Pw
STB200NF04
STB200NF04-1
STP200NF04
40 V
40 V
40 V
< 0.0037
< 0.0037
< 0.0037
120 A
120 A
120 A
310 W
310 W
310 W
1
2
3
D
2
PAK
TO-220
1
3
1
2
3
I
2
PAK
SALES TYPE
MARKING
PACKAGE
PACKAGING
STB200NF04T4
B200NF04
D
2
PAK
TAPE & REEL
STB200NF04-1
B200NF04
I
2
PAK
TUBE
STP200NF04
P200NF04
TO-220
TUBE
Rev. 3
STP200NF04 - STB200NF04 - STB200NF04-1
2/15
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
SD
120A, di/dt
500A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(2) Starting T
j
= 25C, I
d
= 60A, V
DD
=30 V
(#) Current Limited by Package
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
40
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
40
V
V
GS
Gate- source Voltage
20
V
I
D
(#)
Drain Current (continuos) at T
C
= 25C
120
A
I
D
(#)
Drain Current (continuos) at T
C
= 100C
120
A
I
DM
( )
Drain Current (pulsed)
480
A
P
TOT
Total Dissipation at T
C
= 25C
310
W
Derating Factor
2.07
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
1.5
V/ns
E
AS
(2)
Single Pulse Avalanche Energy
1.3
J
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 175
C
TO-220 / I
2
PAK / D
2
PAK
Rthj-case
Thermal Resistance Junction-case Max
0.48
C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max
(see Figure 17)
C/W
Rthj-amb
Thermal Resistance Junction-ambient (Free air) Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
40
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 90 A
3.3
3.7
m
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STP200NF04 - STB200NF04 - STB200NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Table 7: Switching On/Off
Table 8: Source Drain Diode
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 90 A
150
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
5100
1600
600
pF
pF
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 20 V, I
D
= 90 A
R
G
= 4.7
V
GS
= 10 V
(see Figure 20)
30
320
140
120
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 20V, I
D
= 120 A,
V
GS
= 10V
(see Figure 23)
170
30
62
210
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
120
480
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 120 A, V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 120 A, di/dt = 100A/s
V
DD
= 30V, T
j
= 150C
(see Figure 21)
85
190
4.5
ns
nC
A
STP200NF04 - STB200NF04 - STB200NF04-1
4/15
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance
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STP200NF04 - STB200NF04 - STB200NF04-1
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 11: Dource-Drain Diode Forward Char-
acteristics
Figure 12: Capacitance Variations
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 14: Normalized Breakdown Voltage vs
Temperature
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