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January 2005
STP20N20
STF20N20 - STD20N20
N-CHANNEL 200V - 0.10
- 18A TO-220/TO-220FP/DPAK
LOW GATE CHARGE STripFETTM II MOSFET
Table 1: General Features
s
TYPICAL R
DS
(on) = 0.10
s
EXCEPTIONAL dv/dt CAPABILITY
s
LOW GATE CHARGE
s
100% AVALANCHE TESTED
DESCRIPTION
This MOSFET series realized with STMicroelec-
tronics unique STripFET process has specifically
been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters.
APPLICATIONS
s
HIGH CURRENT SWITCHING
APPLICATIONS
s
HIGH EFFICIENCY DC-DC CONVERTERS
s
PRIMARY SIDE SWITCH
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
I
d
P
TOT
STD20N20
STF20N20
STP20N20
200 V
200 V
200 V
< 0.125
< 0.125
< 0.125
18 A
18 A
18 A
90 W
25 W
90 W
1
2
3
1
2
3
1
3
TO-220
TO-220FP
DPAK
SALES TYPE
MARKING
PACKAGE
PACKAGING
STD20N20T4
D20N20
DPAK
TAPE & REEL
STF20N20
F20N20
TO-220FP
TUBE
STP20N20
P20N20
TO-220
TUBE
Rev. 3
STP20N20 - STF20N20 - STD20N20
2/13
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
SD
18A, di/dt
400A/s, V
DD
V
(BR)DSS
Table 4: Thermal Data
(#) When mounted on 1inch FR-4, 2 Oz copper board.
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Value
Unit
TO-220/DPAK
TO-220FP
V
DS
Drain-source Voltage (V
GS
= 0)
200
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
200
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
18
A
I
D
Drain Current (continuous) at T
C
= 100C
11
A
I
DM
( )
Drain Current (pulsed)
72
A
P
TOT
Total Dissipation at T
C
= 25C
90
25
W
Derating Factor
0.72
0.2
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-50 to 150
C
TO-220
DPAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.38
1.38
5
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
50(#)
62.5
C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
18
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
110
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1 mA, V
GS
= 0
200
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 10 A
0.10
0.125
3/13
STP20N20 - STF20N20 - STD20N20
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Source Drain Diode
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 25 V
,
I
D
= 10 A
13
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
940
197
30
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
r
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 100 V, I
D
= 10 A,
R
G
= 4.7
V
GS
= 10 V
(see Figure 17)
15
30
40
10
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 160V, I
D
= 20 A,
V
GS
= 10V
(see Figure 20)
28
5.6
14.5
39
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
18
72
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 20 A, V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 20 A, di/dt = 100A/s
V
DD
= 50V, T
j
= 25C
(see Figure 18)
155
775
10
ns
nC
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 20 A, di/dt = 100A/s
V
DD
= 50V, T
j
= 150C
(see Figure 18)
183
1061
11.6
ns
nC
A
STP20N20 - STF20N20 - STD20N20
4/13
Figure 3: Safe Operating Area For TO-220/
DPAK
Figure 4: Safe Operating Area For TO-220FP
Figure 5: Output Characteristics
Figure 6: Thermal Impedance For TO-220/
DPAK
Figure 7: Thermal Impedance For TO-220FP
Figure 8: Transfer Characteristics
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STP20N20 - STF20N20 - STD20N20
Figure 9: Transconductance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 11: Normalized Gate Threshold Voltage
vs Temperature
Figure 12: Static Drain-source On Resistance
Figure 13: Capacitance Variations
Figure 14: Normalized On Resistance vs Tem-
perature
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