Rev 2
September 2005
1/16
16
STB20NM50 - STB20NM50-1
STP20NM50 - STP20NM50FP
N-CHANNEL 550V@Tj
max
- 0.20
- 20A - TO220/FP-DPAK-IPAK
Zener-Protected SuperMESHTM MOSFET
General features
s
HIGH dv/dt AND AVALANCHE CAPABILITIES
s
100% AVALANCHE TESTED
s
LOW INPUT CAPACITANCE AND GATE
CHARGE
s
LOW GATE INPUT RESISTANCE
Description
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company's
PowerMESHTMhorizontal layout. The resulting
product has an outstanding low on-resistance,
impressively high dv/dt and exellent avalanche
characteristics and dynamic performances.
Applications
The MDmeshTM family is very suitable for
increasing power density of high voltage
converters allowing system miniaturization
andhiher efficiencies
Order codes
Package
Internal schematic diagram
Type
V
DSS(@Tj
max)
R
DS(on)
I
D
STB20NM50
STB20NM50-1
STP20NM50
STP20NM50FP
550 V
550 V
550 V
550 V
<0.25
<0.25
<0.25
<0.25
20 A
20 A
20 A
20 A
1
2
3
1
2
3
1
3
TO-220
TO-220FP
DPAK
1
2
3
IPAK
Sales Type
Marking
Package
Packaging
STB20NM50T4
B20NM50
DPAK
TAPE & REEL
STB20NM50-1
B20NM50-1
IPAK
TUBE
STP20NM505
P20NM50
TO-220
TUBE
STP20NM50FP
P20NM50FP
TO-220FP
TUBE
www.st.com
1 Electrical ratings
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
2/16
1 Electrical
ratings
Table 1.
Absolute maximum ratings
Table 2.
Thermal data
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
TO-220/DPAK/IPAK
TO-220FP
V
GS
Gate-Source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
20
20 (
Note
3)
A
I
D
Drain Current (continuous) at T
C
= 100C
12.6
12.6 (
Note
3)
A
I
DM
Note
2
Drain Current (pulsed)
80
80 (
Note
3)
A
P
TOT
Total Dissipation at T
C
= 25C
192
45
W
Derating Factor
1.2
0.36
W/C
dv/dt
Note
1 Peak Diode Recovery voltage slope
15
V/ns
V
ISO
Insulation Withstand Volatge (DC)
--
2000
V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-65 to 150
C
TO-220/DPAK/IPAK
TO-220FP
Unit
Rthj-case
Thermal Resistance Junction-case Max
0.65
2.8
C/W
Rthj-amb
Thermal Resistance Junction-amb Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
10
A
E
AS
Single Pulse Avalanche Energy
(starting Tj=25C, I
D
=5A, V
DD
= 50V)
650
mJ
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
2 Electrical characteristics
3/16
2 Electrical
characteristics
(T
CASE
= 25 C unless otherwise specified)
Table 4.
On/off states
Table 5.
Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-Source Breakdown
Voltage
I
D
= 250A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage Drain
Current (V
GS
= 0)
V
DS
= Max Rating,
V
DS
= Max Rating,Tc = 125C
1
10
A
A
I
GSS
Gate Body Leakage Current
(V
DS
= 0)
V
GS
= 30V
100
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
3
4
5
V
R
DS(on)
Static Drain-Source On
Resistance
V
GS
= 10 V, I
D
= 10 A
0.20
0.25
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Note
4
Forward Transconductance
V
DS
> I
D(ON)
xR
DS(ON)max,
I
D
= 10A
10
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
1480
285
34
pF
pF
pF
C
oss eq.
Note
5
Equivalent Ouput Capacitance V
GS
=0, V
DS
=0V to 400V
130
pF
Rg
Gate Input Resistance
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=400V, I
D
= 20A
V
GS
=10V
(see Figure 15)
40
13
19
56
nC
nC
nC
2 Electrical characteristics
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
4/16
Table 6.
Switching times
Table 7.
Source drain diode
(1) I
SD
20A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300s, duty cycle 1.5%
(5) C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0
to 80% V
DSS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
=250 V, I
D
=10A,
R
G
=4.7
,
V
GS
=10V
(see Figure 16)
24
16
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
=400 V, I
D
=20A,
R
G
=4.7
,
V
GS
=10V
(see Figure 16)
9
8.5
23
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Note
2
Source-drain Current
Source-drain Current (pulsed)
20
80
A
A
V
SD
Note
4
Forward on Voltage
I
SD
=20A, V
GS
=0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=20A, di/dt = 100A/s,
V
DD
=100 V, Tj=25C
350
4.6
26
ns
C
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=20A, di/dt = 100A/s,
V
DD
=100 V, Tj=150C
435
5.9
27
ns
C
A
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
2 Electrical characteristics
5/16
2.1
Electrical Characteristics (curves)
Figure 1.
Safe Operating Area for
TO-220/DPAK/IPAK
Figure 2.
Thermal Impedance for
TO-220/DPAK/IPAK
Figure 3.
Safe Operating Area for TO-220FP
Figure 4.
Thermal Impedance for TO-220FP
Figure 5.
Output Characteristics
Figure 6.
Transfer Characteristics
2 Electrical characteristics
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
6/16
Figure 7.
Transconductance
Figure 8.
Static Drain-Source on Resistance
Figure 9.
Gate Charge vs Gate -Source
Voltage
Figure 10. Normalized Gate Threshold Voltage
vs Temperatute
Figure 11. Capacitance Variations
Figure 12. Normalized on Resistance vs
Temperature
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
2 Electrical characteristics
7/16
Figure 13. Source-drain Diode Forward
Characteristics
3 Test circuits
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
8/16
3 Test
circuits
Figure 14. Switching Times Test Circuit For
Resistive Load
Figure 15. Gate Charge Test Circuit
Figure 16. Test Circuit For Indictive Load
Switching and Diode Recovery
Times
Figure 17. Unclamped Inductive Waveform
Figure 18. Unclamped Inductive Load Test
Circuit
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
4 Package mechanical data
9/16
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
4 Package mechanical data
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
10/16
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
0.645
L30
28.90
1.137
P
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
TO-220 MECHANICAL DATA
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
4 Package mechanical data
11/16
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
TO-220FP MECHANICAL DATA
4 Package mechanical data
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
12/16
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
c
0.49
0.70
0.019
0.027
c2
1.23
1.32
0.048
0.052
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
E
10
10.40
0.393
0.410
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L2
1.27
1.40
0.050
0.055
TO-262 (I
2
PAK) MECHANICAL DATA
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
4 Package mechanical data
13/16
TO-247 MECHANICAL DATA
1
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.393
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
4
D
2
PAK MECHANICAL DATA
3
5 Packing mechanical data
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
14/16
5 Packing
mechanical
data
TAPE AND REEL SHIPMENT
D
2
PAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
R
50
1.574
T
0.25
0.35
0.0098 0.0137
W
23.7
24.3
0.933
0.956
TAPE MECHANICAL DATA
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
6 Revision History
15/16
6
Revision History
Date
Revision
Changes
05-Sep-2005
2
Inserted Ecopack indication
6 Revision History
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
16/16
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