1/11
June 2003
STP20NM60FD - STF20NM60D
STW20NM60FD
N-CHANNEL 600V - 0.26
- 20A TO-220/TO-220FP/TO-247
FDmeshTM POWER MOSFET (with FAST DIODE)
n
TYPICAL R
DS
(on) = 0.26
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
n
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmeshTM associates all advantages of re-
duced on-resistance and fast switching with an in-
trinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in par-
ticular ZVS phase-shift converters.
APPLICATIONS
n
ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP20NM60FD
STF20NM60D
STW20NM60FD
600 V
600 V
600 V
< 0.29
< 0.29
< 0.29
20 A
20 A
20 A
192 W
45 W
214 W
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP20NM60FD
P20NM60FD
TO-220
TUBE
STF20NM60D
F20NM60D
TO-220FP
TUBE
STW20NM60FD
W20NM60FD
TO-247
TUBE
TO-220
TO-220FP
1
2
3
1
2
3
TO-247
INTERNAL SCHEMATIC DIAGRAM
STP20NM60FD - STF20NM60D - STW20NM60FD
2/11
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
SD
20 A, di/dt
400 A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
STP20NM60FD
STF20NM60D
STW20NM60FD
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
20
20 (*)
20
A
I
D
Drain Current (continuous) at T
C
= 100C
12.6
12.6 (*)
12.6
A
I
DM
( )
Drain Current (pulsed)
80
80 (*)
80
A
P
TOT
Total Dissipation at T
C
= 25C
192
45
214
W
Derating Factor
1.20
0.36
1.42
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
20
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
-
V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
65 to 150
C
C
TO-220
TO-220FP
TO-247
Rthj-case
Thermal Resistance Junction-case Max
0.65
2.8
0.585
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
30
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
10
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 35 V)
700
mJ
3/11
STP20NM60FD - STF20NM60D - STW20NM60FD
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 10 A
0.26
0.29
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 10A
9
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1310
580
30
pF
pF
pF
C
oss eq.
(3)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 480V
190
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
2.7
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 300V, I
D
= 10A
R
G
= 4.7
V
GS
= 10V
(Resistive Load see, Figure 3)
25
12
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480V, I
D
= 20A,
V
GS
= 10V
37
10
17
52
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V, I
D
= 20A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
8
22
30
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
20
80
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 20 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 20 A, di/dt = 100A/s,
V
DD
= 60 V, T
j
= 150C
(see test circuit, Figure 5)
340
2.8
17
ns
C
A
STP20NM60FD - STF20NM60D - STW20NM60FD
4/11
Thermal Impedance For TO-247
Safe Operating Area For TO-247
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Thermal Impedance For TO-220
Safe Operating Area For TO-220
5/11
STP20NM60FD - STF20NM60D - STW20NM60FD
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Output Characteristics
Capacitance Variations
Static Drain-source On Resistance
Transconductance
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