STP2NA50
STP2NA50FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
s
TYPICAL R
DS(on)
= 3.25
s
30V GATE TO SOURCE VOLTAGE RATING
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
s
REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s
MEDIUM CURRENT, HIGH SPEED
SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
CONSUMER AND INDUSTRIAL LIGHTING
INTERNAL SCHEMATIC DIAGRAM
T YPE
V
DSS
R
DS(o n)
I
D
ST P2NA50
ST P2NA50FI
500 V
500 V
< 4
<
4
2.8 A
2 A
March 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
STP2NA50
STP2NA50F I
V
DS
Drain-Source Voltage (V
gs
= 0)
500
V
V
DGR
Drain-Gate Volt age (R
gs
= 20 K
)
500
V
V
GS
Gate-Source Voltage
30
V
I
D
Drain-Current (continuous) at T
c
= 25
o
C
2.8
2
A
I
D
Drain-Current (continuous) at T
c
= 100
o
C
1.8
1.25
A
I
DM
(
)
Drain-Current (Pulsed)
11.2
11.2
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
75
35
W
Derat ing Factor
0.6
0.28
W/
o
C
V
ISO
Insulation W ithst and Voltage (DC)
-
4000
V
T
stg
Storage T emperature
-65 to 150
o
C
T
j
Max Operating Junction T emperature
150
o
C
(
)Pulse width limited by safe operating area
1
2
3
TO-220
ISOWATT220
1
2
3
1/6
THERMAL DATA
TO 220
IS OW ATT 220
R
t hj-ca se
Thermal Resistance Junction-case
Max
1. 67
3.57
o
C/ W
R
t hj- amb
R
thc- si nk
T
l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/ W
o
C/ W
o
C
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
I
AR
Avalanche Current , Repet itive or Not -Repetitive
(pulse widt h limited by T
j
max,
< 1%)
2.8
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
42
mJ
E
AR
Repetit ive Avalanche Energy
(pulse widt h limited by T
j
max,
< 1%)
1.6
mJ
I
AR
Avalanche Current , Repet itive or Not -Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
< 1%)
1.8
A
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
Drain-source
Breakdown Volt age
I
D
= 250
A
V
GS
= 0
500
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0. 8
T
c
= 125
o
C
250
1000
A
A
I
GSS
Gate-Source Leakage
Current (V
DS
= 0)
V
G S
=
30 V
100
mA
ON (
)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
GS(th)
Gate T hreshold Voltage V
DS
= V
GS
ID
= 250
A
2.25
3
3.75
V
R
DS( on)
St atic Drain-source On
Resistance
V
G S
= 10 V
I
D
= 1. 4 A
V
G S
= 10 V
I
D
= 1.4 A
T
c
= 100
o
C
3. 25
4
8
I
D(o n)
On Stat e Drain Current
V
DS
> I
D(on)
x R
DS(on) max
V
G S
= 10 V
2. 8
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(on)
x R
DS(on) max
I
D
= 1.4 A
0. 8
2
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
300
55
15
400
70
20
pF
pF
pF
STP2NA50/FI
2/6
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
t
r
Turn-on T ime
Rise Time
V
DD
= 250 V
I
D
= 1.4 A
R
G
= 4.7
V
G S
= 10 V
7
8
10
11
ns
ns
(di/ dt)
on
Turn-on Current Slope
V
DD
= 400 V
I
D
= 2.8 A
R
G
= 47
V
G S
= 10 V
350
A/
s
Q
g
Q
gs
Q
gd
Total Gat e Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400 V
I
D
=2.8 A
V
GS
= 10 V
18
5.5
7
25
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall T ime
Cross-over T ime
V
DD
= 400 V
I
D
= 2.8 A
R
G
= 4.7
V
G S
= 10 V
7
7
14
10
10
20
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
2.8
11.2
A
A
V
SD
(
)
Forward O n Volt age
I
SD
= 2. 8 A
V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 2.8 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
380
4.4
23
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STP2NA50/FI
3/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP2NA50/FI
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.4
0.7
0.015
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
ISOWATT220 MECHANICAL DATA
P011G
STP2NA50/FI
5/6
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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. . .
STP2NA50/FI
6/6
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