STP30NE06L
STP30NE06LFP
N - CHANNEL 60V - 0.035
- 30A - TO-220/TO-220FP
STripFET
TM
POWER MOSFET
s
TYPICAL R
DS(on)
= 0.035
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
"Single
Feature
Size
TM
" strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Uni t
ST P30NE06L
STP30NE06L FP
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
60
V
V
GS
G ate-source Volt age
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
30
17
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
21
12
A
I
DM
(
)
Drain Current (pulsed)
120
68
A
P
tot
T otal Dissipation at T
c
= 25
o
C
80
30
W
Derating Factor
0.53
0.2
W/
o
C
V
ISO
I nsulation W ithstand Voltage (DC)
2000
V
T
s tg
Storage T emperature
-65 to 175
o
C
T
j
Max. O perat ing Junct ion T emperature
175
o
C
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS( on )
I
D
STP30NE06L
STP30NE06LF P
60 V
60 V
< 0.05
< 0.05
30 A
17 A
March 1999
TO-220
TO-220FP
1
2
3
1
2
3
1/9
THERMAL DATA
TO-220
TO-220FP
R
thj -case
Thermal Resistance Junction-case
Max
1.875
5
o
C/W
R
thj -amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
20
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
100
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
60
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
= 125
o
C
1
10
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
1
1.75
2. 5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 5 V
I
D
= 15 A
V
GS
= 10 V
I
D
= 15 A
0.045
0.035
0.06
0.05
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
30
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
=15 A
10
18
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1350
195
58
pF
pF
pF
STP30NE06L/FP
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay T ime
Rise Time
V
DD
= 30 V
I
D
= 15 A
R
G
= 4.7
V
G S
= 4.5 V
(Resistive Load, see fig. 3)
25
105
ns
ns
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 48 V I
D
= 30 A V
GS
= 5 V
20
8
10
28
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(of f)
t
f
Turn-off Delay T ime
Fall T ime
V
DD
= 30 V
I
D
= 15 A
R
G
= 4.7
V
G S
= 4.5 V
(Resistive Load, see fig. 3)
50
20
ns
ns
t
r (Voff)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
V
DD
= 48 V
I
D
= 30 A
R
G
= 4.7
V
GS
= 4. 5 V
(Induct ive Load, see fig. 5)
15
40
60
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
30
120
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 30 A
V
GS
= 0
1. 5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 30 A
di/dt = 100 A/
s
V
DD
= 30 V
T
j
= 150
o
C
(see t est circuit, f ig. 5)
80
0.18
4.5
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP30NE06L/FP
3/9
Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP30NE06L/FP
4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP30NE06L/FP
5/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP30NE06L/FP
6/9
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP30NE06L/FP
7/9
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
STP30NE06L/FP
8/9
Information furnished is believ ed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1999 STMicroelectronics Printed in Italy All Rights Reserved
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9/9
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