STP36N05L
STP36N05LFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
TYPICAL R
DS(on)
= 0.033
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
LOGIC LEVEL COMPATIBLE INPUT
s
175
o
C OPERATING TEMPERATURE
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
1
2
3
TO-220
ISOWATT220
November 1996
TYPE
V
DSS
R
DS ( on)
I
D
STP36N05L
STP36N05LFI
50 V
50 V
< 0. 04
< 0. 04
36 A
21 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
STP36N05L
STP36N05LFI
V
D S
Drain-source Voltage (V
GS
= 0)
50
V
V
DG R
Drain- gate Voltage (R
GS
= 20 k
)
50
V
V
GS
Gate-source Voltage
15
V
I
D
Drain Current (cont inuous) at T
c
= 25
o
C
36
21
A
I
D
Drain Current (cont inuous) at T
c
= 100
o
C
25
14
A
I
D M
(
)
Drain Current (pulsed)
144
144
A
P
tot
Total Dissipation at T
c
= 25
o
C
120
40
W
Derating Factor
0.8
0.27
W/
o
C
V
ISO
I nsulat ion Withstand Voltage (DC)
2000
V
T
stg
St orage Temperat ure
-65 to 175
o
C
T
j
Max. Operat ing Junction Temperature
175
o
C
(
) Pulse width limited by safe operating area
1
2
3
1/10
THERMAL DATA
TO-220
ISOWATT220
R
thj-cas e
Thermal Resist ance Junct ion-case
Max
1.25
3. 75
o
C/W
R
thj- amb
R
t hc- sin k
T
l
Thermal Resist ance Junct ion-ambient
Max
Thermal Resist ance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Uni t
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
36
A
E
AS
Single Pulse Avalanche Energy
(st arting T
j
= 25
o
C, I
D
= I
AR
, V
D D
= 25 V)
240
mJ
E
AR
Repet itive Avalanche Energy
(pulse width limited by T
j
max,
< 1%)
60
mJ
I
A R
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
< 1%)
25
A
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
( BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
G S
= 0
50
V
I
DS S
Zero Gate Volt age
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
T
c
= 125
o
C
1
10
A
A
I
G SS
Gate-body Leakage
Current (V
D S
= 0)
V
GS
=
15 V
100
nA
ON (
)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V
G S(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
A
1
1.6
2.5
V
R
DS( on)
St atic Drain-source On
Resist ance
V
GS
= 5 V
I
D
= 18 A
0. 033
0. 04
I
D( on)
On St ate Drain Current
V
DS
> I
D( on)
x R
D S(on) max
V
GS
= 10 V
36
A
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D( on)
x R
D S(on) max
I
D
= 18 A
12
24
S
C
iss
C
oss
C
rss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
G S
= 0
1350
450
130
1800
600
200
pF
pF
pF
STP36N05L/FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 25 V
I
D
= 18 A
R
G
= 50
V
GS
= 5 V
(see test circuit, figure 3)
90
550
130
800
ns
ns
(di/dt)
on
Turn-on Current Slope
V
DD
= 40 V
I
D
= 36 A
R
G
= 50
V
GS
= 5 V
(see test circuit, figure 5)
85
A/
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 40 V
I
D
= 36 A
V
GS
= 5 V
35
11
19
50
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 40 V
I
D
= 36 A
R
G
= 50
V
GS
= 5 V
(see test circuit, figure 5)
110
180
310
160
260
450
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
I
S D
I
SD M
(
)
Source-drain Current
Source-drain Current
(pulsed)
36
144
A
A
V
S D
(
)
Forward On Volt age
I
SD
= 36 A
V
G S
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 36 A
di/dt = 100 A/
s
V
DD
= 30 V
T
j
= 150
o
C
(see test circuit, figure 5)
100
0.27
5.5
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
STP36N05L/FI
3/10
Thermal Impedance For TO-220
Derating Curve For TO-220
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Transfer Characteristics
STP36N05L/FI
4/10
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized On Resistance vs Temperature
Normalized Gate Threshold Voltage vs
Temperature
STP36N05L/FI
5/10
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
STP36N05L/FI
6/10
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
Fig. 1: Unclamped Inductive Load Test Circuits
STP36N05L/FI
7/10
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP36N05L/FI
8/10
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.4
0.7
0.015
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
ISOWATT220 MECHANICAL DATA
P011G
STP36N05L/FI
9/10
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.
STP36N05L/FI
10/10
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