STP3NB80
STP3NB80FP
N - CHANNEL 800V - 4.6
- 2.6A - TO-220/TO-220FP
PowerMESH
TM
MOSFET
s
TYPICAL R
DS(on)
= 4.6
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
TM
process, STMicroelectronics has designed an
advanced family
of
power MOSFETs
with
outstanding performances.
The
new
patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY(UPS)
s
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
January 1999
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
STP3NB80
STP3NB80F P
V
DS
Drain-source Voltage (V
GS
= 0)
800
V
V
DGR
Drain- gate Volt age (R
GS
= 20 k
)
800
V
V
GS
G ate-source Voltage
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
2.6
2.6 (
)
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
1.6
1.6 (
)
A
I
DM
(
)
Drain Current (pulsed)
10.4
10.4
A
P
tot
T otal Dissipation at T
c
= 25
o
C
90
35
W
Derating Factor
0.72
0.28
W /
o
C
dv/dt (
1
)
Peak Diode Recovery volt age slope
4.5
V/ns
V
ISO
I nsulat ion W ithstand Voltage (DC)
2000
V
T
s tg
Storage Temperat ure
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
2.6 A
,
di/dt
200 A/
s, V
DD
V
(BR)DSS
, Tj
T
JMA
(
)
Limited only by maximum temperature allowed
TYPE
V
DSS
R
DS(on)
I
D
ST P3NB80
ST P3NB80FP
800 V
800 V
< 6.5
< 6.5
2.6 A
2.6 A
1/9
THERMAL DATA
TO-220
TO220-FP
R
thj -case
Thermal Resistance Junction-case
Max
1.39
3.57
o
C/W
R
thj -amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Valu e
Unit
I
AR
Avalanche Current , Repet itive or Not-Repet itive
(pulse width limited by T
j
max)
2. 6
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
176
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
800
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
50
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
V
G S(th)
Gat e Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
3
4
5
V
R
DS(on)
Static Drain-source O n
Resist ance
V
GS
= 10V
I
D
= 1.3 A
4.6
6. 5
I
D(o n)
On Stat e Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
2. 6
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
g
f s
(
)
Forward
Transconduct ance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
= 1.3 A
1
2
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse T ransfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
440
60
7
575
78
9
pF
pF
pF
STP3NB80/FP
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 400 V
I
D
= 1.3 A
R
G
= 4.7
V
G S
= 10 V
12
10
17
14
ns
ns
Q
g
Q
gs
Q
gd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
=640 V
I
D
= 3 A V
GS
= 10 V
17
6.5
7.5
24
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
t
r (Voff)
t
f
t
c
Off -volt age Rise Time
Fall Time
Cross-over Time
V
DD
= 640 V
I
D
=3 A
R
G
= 4.7
V
GS
= 10 V
15
17
22
21
24
31
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
2. 6
10. 4
A
A
V
SD
(
)
Forward On Volt age
I
SD
= 2. 6 A
V
GS
= 0
1. 6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 2.6 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
650
2.8
8.5
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
STP3NB80/FP
3/9
Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP3NB80/FP
4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP3NB80/FP
5/9
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