STP3NB90
STP3NB90FP
N - CHANNEL 900V - 4
- 3.5 A - TO-220/TO-220FP
PowerMESH
TM
MOSFET
TARGET DATA
s
TYPICAL R
DS(on)
= 4
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
TM
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
October 1998
TO-220 TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP4NB90
STP4NB90FP
V
DS
Drain-source Voltage (V
GS
= 0)
900
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
900
V
V
GS
Gate-source Voltage
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
3.5
3.5(**)
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
2.2
1.26(*)
A
I
DM
Drain Current (pulsed)
14
14
A
P
tot
Total Dissipation at T
c
= 25
o
C
100
35
W
Derating Factor
0.8
0.28
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
4.5
V/ns
V
ISO
Insulation Withstand Voltage (DC)
2000
V
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
(*) Pulse width limited by safe operating area (
1
) I
SD
3.5 A, di/dt
200 A/
s, V
DD
V
(BR)DSS
, Tj
T
JMAX
(**) Limited only T
JMAX
TYPE
V
DSS
R
DS(on)
I
D
STP3NB90
STP3NB90FP
900 V
900 V
< 4.2
< 4.2
3.5 A
3.5 A
1/6
THERMAL DATA
TO-220
TO220-FP
R
thj-case
Thermal Resistance Junction-case Max
1.25
3.57
o
C/W
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
3.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
233
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A V
GS
= 0
900
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 125
o
C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V I
D
= 1.7 A
4
4.2
I
D(o n)
On State Drain Current V
DS
> I
D(o n)
x R
DS(on )max
V
GS
= 10 V
3.5
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )max
I
D
= 1.7 A
1.6
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0
700
90
7
pF
pF
pF
STP3NB90/FP
2/6
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on )
t
r
Turn-on Time
Rise Time
V
DD
= 450 V I
D
= 1.7 A
R
G
= 4.7
V
GS
= 10 V
TBD
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 720 V I
D
= 3.5 A V
GS
= 10 V
21
8
9
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 720V I
D
= 3.5 A
R
G
= 4.7
V
GS
= 10 V
TBD
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
3.5
14
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 3.5 A V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 3.5 A di/dt = 100 A/
s
V
DD
= 100 V T
j
= 150
o
C
TBD
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STP3NB90/FP
3/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP3NB90/FP
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
STP3NB90/FP
5/6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1998 STMicroelectronics Printed in Italy All Rights Reserved
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6/6
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