1/10
June 2001
STP3NC70Z
STP3NC70ZFP
N-CHANNEL 700V - 4.1
- 2.5A TO-220/TO-220FP
Zener-Protected PowerMESHTMIII MOSFET
(1) I
SD
2.5A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(*) Limited by Maximum Temperature allowed
s
TYPICAL R
DS
(on) = 4.1
s
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES
s
100% AVALANCHE TESTED
s
VERY LOW GATE INPUT RESISTANCE
s
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrat-
ing back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capa-
bility with higher ruggedness performance as re-
quested by a large variety of single-switch
applications.
APPLICATIONS
s
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP3NC70Z
STP3NC70ZFP
700V
700V
< 4.7
< 4.7
2.5 A
2.5 A
Symbol
Parameter
Value
Unit
STP3NC70Z
STP3NC70ZFP
V
DS
Drain-source Voltage (V
GS
= 0)
700
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
700
V
V
GS
Gate- source Voltage
25
V
I
D
Drain Current (continuos) at T
C
= 25C
2.5
2.5 (*)
A
I
D
Drain Current (continuos) at T
C
= 100C
1.6
1.6 (*)
A
I
DM
(
q
)
Drain Current (pulsed)
10
10
A
P
TOT
Total Dissipation at T
C
= 25C
65
35
W
Derating Factor
0.52
0.28
W/C
I
GS
Gate-source Current (DC)
50
mA
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
)
1.5
KV
dv/dt (1)
Peak Diode Recovery voltage slope
3
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-220
1
2
3
TO-220FP
STP3NC70Z/STP3NC70ZFP
2/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.92
3.57
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
2.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
150
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
700
V
BV
DSS
/
T
J
Breakdown Voltage Temp.
Coefficient
I
D
= 1 mA, V
GS
= 0
0.8
V/C
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
10
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 1.25 A
4.1
4.7
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 1.25A
2
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
530
pF
C
oss
Output Capacitance
50
pF
C
rss
Reverse Transfer
Capacitance
7
pF
3/10
STP3NC70Z/STP3NC70ZFP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
T (25-T) BV
GSO
(25)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid
the usage of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 350 V, I
D
= 1.25 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
14
ns
t
r
Rise Time
11
ns
Q
g
Total Gate Charge
V
DD
= 560V, I
D
= 2.5A,
V
GS
= 10V
17
24
nC
Q
gs
Gate-Source Charge
4
nC
Q
gd
Gate-Drain Charge
7
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 560V, I
D
= 2.5 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
16
ns
t
f
Fall Time
33
ns
t
c
Cross-over Time
40
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
2.5
A
I
SDM
(2)
Source-drain Current (pulsed)
10
A
V
SD
(1)
Forward On Voltage
I
SD
= 2.5 A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 2.5 A, di/dt = 100A/s,
V
DD
= 27V, T
j
= 150C
(see test circuit, Figure 5)
175
ns
Q
rr
Reverse Recovery Charge
0.6
C
I
RRM
Reverse Recovery Current
7.5
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs= 1mA (Open Drain)
25
V
T
Voltage Thermal Coefficient
T=25C Note(3)
1.3
10
-4
/C
Rz
Dynamic Resistance
I
D
= 50 mA, V
GS
= 0
90
STP3NC70Z/STP3NC70ZFP
4/10
Safe Operating Area for TO-220FP
Thermal Impedance for TO-220FP
Safe Operating Area for TO-220
Thermal Impedance for TO-220
Transfer Characteristics
Output Characteristics
5/10
STP3NC70Z/STP3NC70ZFP
Gate Charge vs Gate-source Voltage
Normalized On Resistance vs Temperature
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Transconductance
Static Drain-source On Resistance
STP3NC70Z/STP3NC70ZFP
6/10
Source-drain Diode Forward Characteristics
7/10
STP3NC70Z/STP3NC70ZFP
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
STP3NC70Z/STP3NC70ZFP
8/10
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
9/10
STP3NC70Z/STP3NC70ZFP
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
TO-220FP MECHANICAL DATA
STP3NC70Z/STP3NC70ZFP
10/10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2000 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
PDF 
ZIP