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June 2005
STP40N20
STB40N20 - STW40N20
N-CHANNEL 200V - 0.038
- 40A TO-220/TO-247/D
2
PAK
LOW GATE CHARGE STripFETTM MOSFET
Table 1: General Features
TYPICAL R
DS
(on) = 0.038
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
EXCELLENT FIGURE OF MERIT (R
DS
*Q
g
)
100% AVALANCHE TESTED
DESCRIPTION
This MOSFET series realized with STMicroelec-
tronics unique STripFET process has specifically
been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
UPS
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP40N20
STW40N20
STB40N20
200 V
200 V
200 V
< 0.045
< 0.045
< 0.045
40 A
40 A
40 A
160 W
160 W
160 W
1
2
3
1
2
3
1
3
TO-220
TO-247
D
2
PAK
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP40N20
P40N20
TO-220
TUBE
STW40N20
W40N20
TO-247
TUBE
STB40N20
B40N20
D
2
PAK
TAPE & REEL
Rev. 3
STB40N20 - STP40N20 - STW40N20
2/13
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
SD
40A, di/dt
200 A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
200
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
200
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
40
A
I
D
Drain Current (continuous) at T
C
= 100C
25
A
I
DM
( )
Drain Current (pulsed)
160
A
P
TOT
Total Dissipation at T
C
= 25C
160
W
Derating Factor
1.28
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
12
V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
C
TO-220/
TO-247
Rthj-case
Thermal Resistance Junction-case Max
0.78
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
50
C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
40
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
230
mJ
3/13
STB40N20 - STP40N20 - STW40N20
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Table 7: Dynamic
Table 8: Source Drain Diode
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1mA, V
GS
= 0
200
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 20 A
0.038
0.045
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
=20 A
30
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2500
510
78
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
r
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 100 V, I
D
= 20 A,
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 17)
20
44
74
22
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 160V, I
D
= 40 A,
V
GS
= 10V
75
13.2
35.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
40
160
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 20 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 20 A, di/dt = 100A/s
V
DD
= 100V, T
j
= 25C
(see test circuit, Figure 18)
192
922
9.6
ns
nC
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 20 A, di/dt = 100A/s
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 18)
242
1440
11.9
ns
nC
A
STB40N20 - STP40N20 - STW40N20
4/13
Figure 3: Safe Operating Area For TO-220/
D
2
PAK
Figure 4: Safe Operating Area For TO-247
Figure 5: Output Characteristics
Figure 6: Thermal Impedance For TO-220/
D
2
PAK
Figure 7: Thermal Impedance For TO-247
Figure 8: Transfer Characteristics
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STB40N20 - STP40N20 - STW40N20
Figure 9: Transconductance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 11: Normalized Gate Threshold Voltage
vs Temperature
Figure 12: Static Drain-source On Resistance
Figure 13: Capacitance Variations
Figure 14: Normalized On Resistance vs Tem-
perature
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