STP40NE03L-20
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZE
TM
" POWER MOSFET
s
TYPICAL R
DS(on)
= 0.014
s
EXCEPTIONAL dv/dt CAPABILITY
s
LOW GATE CHARGE A 100
o
C
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique "Single Feature Size
TM
"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
October 1997
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V
DS
Drain-source Voltage (V
G S
= 0)
30
V
V
DGR
Drain- gate Voltage (R
G S
= 20 k
)
30
V
V
GS
Gate-source Voltage
15
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
40
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
28
A
I
DM
(
)
Drain Current (pulsed)
160
A
P
to t
Total Dissipation at T
c
= 25
o
C
80
W
Derat ing Fact or
0.53
W/
o
C
dv/dt (
1
)
Peak Diode Recovery voltage slope
7
V/ ns
T
st g
St orage Temperature
-65 to 175
o
C
T
j
Max. Operating Junction T emperat ure
175
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
40 A, di/dt
300 A/
s, V
DD
V
(BR)DSS
, T
j
T
JMAX
TYPE
V
DSS
R
DS(on)
I
D
ST P40NE03L-20
30 V
<0. 020
40 A
1/8
THERMAL DATA
R
t hj-ca se
R
t hj- amb
R
thc- si nk
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
Maximum Lead Temperature For Soldering Purpose
1.88
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
I
AR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by T
j
max,
< 1%)
40
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 15V)
200
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
Drain-source
Breakdown Volt age
I
D
= 250
A
V
GS
= 0
30
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
G S
=
15 V
100
nA
ON (
)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
1
1.8
2.5
V
R
DS( on)
St atic Drain-source On
Resistance
V
G S
= 10V
I
D
= 20 A
V
G S
= 5V
I
D
= 20 A
0.014
0.02
0.023
I
D(o n)
On St ate Drain Current
V
DS
> I
D(on)
x R
DS(on) max
V
G S
= 10 V
40
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
g
fs
(
)
Forward
Transconduct ance
V
DS
> I
D(on)
x R
DS(on) max
I
D
= 20 A
15
20
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1850
450
160
2400
590
210
pF
pF
pF
STP40NE03L-20
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 15 V
I
D
= 20 A
R
G
=4.7
V
G S
= 5 V
25
160
33
210
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24 V
I
D
= 40 A
V
GS
= 5 V
29
12
14
38
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 24 V
I
D
= 40 A
R
G
=4.7
V
GS
= 5 V
25
120
155
33
160
210
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
40
160
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 40 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 40 A
di/ dt = 100 A/
s
V
DD
= 20 V
T
j
= 150
o
C
50
0.9
3.5
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STP40NE03L-20
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STP40NE03L-20
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STP40NE03L-20
5/8
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