1/11
September 2002
STP40NF10
STB40NF10 - STB40NF10-1
N-CHANNEL 100V - 0.024
- 50A TO-220/D
2
PAK/I
2
PAK
LOW GATE CHARGE STripFETTM II POWER MOSFET
(1) I
SD
40A, di/dt
600A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(2) Starting T
j
= 25C, I
D
= 40A, V
DD
= 50V
s
TYPICAL R
DS
(on) = 0.024
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
s
ADD SUFFIX "T4" FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
(*) Limited by Package
TYPE
V
DSS
R
DS(on)
I
D
STP40NF10
STB40NF10
STB40NF10-1
100 V
100 V
100 V
< 0.028
< 0.028
< 0.028
50 A
50 A
50 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
100
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
100
V
V
GS
Gate- source Voltage
20
V
I
D
(*)
Drain Current (continuous) at T
C
= 25C
50
A
I
D
Drain Current (continuous) at T
C
= 100C
35
A
I
DM
(
l
)
Drain Current (pulsed)
200
A
P
TOT
Total Dissipation at T
C
= 25C
150
W
Derating Factor
1
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
20
V/ns
E
AS
(2)
Single Pulse Avalanche Energy
150
mJ
T
stg
Storage Temperature
55 to 175
C
T
j
Operating Junction Temperature
TO-220
1
2
3
1
3
D
2
PAK
1
2
3
I
2
PAK
INTERNAL SCHEMATIC DIAGRAM
STP40NF10 - STB40NF10 - STB40NF10-1
2/11
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
100
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
2.8
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 20 A
0.024
0.028
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 25V
,
I
D
= 20 A
20
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1780
pF
C
oss
Output Capacitance
265
pF
C
rss
Reverse Transfer
Capacitance
112
pF
3/11
STP40NF10 - STB40NF10 - STB40NF10-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 50 V, I
D
= 20 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
28
ns
t
r
Rise Time
63
ns
Q
g
Total Gate Charge
V
DD
= 80V, I
D
=40A,V
GS
= 10V
60
80
nC
Q
gs
Gate-Source Charge
10
nC
Q
gd
Gate-Drain Charge
23
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 50 V, I
D
= 20 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
84
28
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
40
A
I
SDM
(2)
Source-drain Current (pulsed)
160
A
V
SD
(1)
Forward On Voltage
I
SD
= 40 A, V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 40 A, di/dt = 100A/s,
V
DD
= 25V, T
j
= 150C
(see test circuit, Figure 5)
114
456
8
ns
nC
A
Thermal Impedance
Safe Operating Area
STP40NF10 - STB40NF10 - STB40NF10-1
4/11
Output Characteristics
Transfer Characteristics
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Transconductance
Capacitance Variations
5/11
STP40NF10 - STB40NF10 - STB40NF10-1
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Drain-Source Breakdown vs
Temperature
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