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June 2002
STP40NF10L
N-CHANNEL 100V - 0.028
- 40A TO-220
LOW GATE CHARGE STripFETTM POWER MOSFET
(1) Starting T
j
= 25C, I
D
= 20A, V
DD
= 40V
s
TYPICAL R
DS
(on) = 0.028
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
s
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP40NF10L
100 V
< 0.033
40 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
100
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
100
V
V
GS
Gate- source Voltage
17
V
I
D
Drain Current (continuos) at T
C
= 25C
40
A
I
D
Drain Current (continuos) at T
C
= 100C
25
A
I
DM
(
l
)
Drain Current (pulsed)
160
A
P
TOT
Total Dissipation at T
C
= 25C
150
W
Derating Factor
1
W/C
E
AS
(1)
Single Pulse Avalanche Energy
430
mJ
T
stg
Storage Temperature
65 to 175
C
T
j
Max. Operating Junction Temperature
175
C
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STP40NF10L
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
100
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 17V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
1
1.7
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 20 A
0.028
0.033
V
GS
= 5V, I
D
= 20 A
0.030
0.036
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
=
15V
,
I
D
= 20 A
25
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2300
pF
C
oss
Output Capacitance
290
pF
C
rss
Reverse Transfer
Capacitance
125
pF
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STP40NF10L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 50 V, I
D
= 20 A
R
G
= 4.7
V
GS
= 4.5V
(see test circuit, Figure 3)
25
ns
t
r
Rise Time
82
ns
Q
g
Total Gate Charge
V
DD
= 80V, I
D
=40A,V
GS
= 5V
46
64
nC
Q
gs
Gate-Source Charge
12
nC
Q
gd
Gate-Drain Charge
22
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 50 V, I
D
= 20 A,
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
64
24
ns
ns
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =80V, I
D
= 40 A
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
51
29
53
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
40
A
I
SDM
(1)
Source-drain Current (pulsed)
160
A
V
SD
(2)
Forward On Voltage
I
SD
= 40 A, V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 40 A, di/dt = 100A/s,
V
DD
= 30V, T
j
= 150C
(see test circuit, Figure 5)
110
467
8
ns
nC
A
Safe Operating Area
Thermal Impedance
STP40NF10L
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Transfer Characteristics
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Transconductance
Output Characteristics
Capacitance Variations
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STP40NF10L
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Drain-Source Breakdown vs
Temperature
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