1/9
May 2001
STP4NB30
STP4NB30FP
N-CHANNEL 300V - 1.8
- 4A - TO-220/TO-220FP
PowerMeshTM MOSFET
(1)I
SD
4 A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(*) Limited only by Maximum Temperature Allowed
s
TYPICAL R
DS
(on) = 1.8
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP4NB30
STP4NB30FP
300 V
300 V
< 2
< 2
4 A
4 A
Symbol
Parameter
Value
Unit
STP4NB30
STP4NB30FP
V
DS
Drain-source Voltage (V
GS
= 0)
300
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
300
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
4
4 (*)
A
I
D
Drain Current (continuos) at T
C
= 100C
2.5
2.5 (*)
A
I
DM
(1)
Drain Current (pulsed)
16
16 (*)
A
P
TOT
Total Dissipation at T
C
= 25C
70
30
W
Derating Factor
0.56
0.24
W/C
dv/dt
Peak Diode Recovery voltage slope
4
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2000
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-220
1
2
3
1
2
3
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
STP4NB30/STP4NB30FP
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.785
4.17
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
4
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
150
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
300
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 2.5 A
1.8
2
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 2.5 A
2.1
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
260
pF
C
oss
Output Capacitance
56
pF
C
rss
Reverse Transfer
Capacitance
7
pF
3/9
STP4NB30/STP4NB30FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 150V, I
D
= 2.5 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
9
ns
t
r
Rise Time
9
ns
Q
g
Total Gate Charge
V
DD
= 240V, I
D
= 5 A,
V
GS
= 10V
12
16
nC
Q
gs
Gate-Source Charge
7.5
nC
Q
gd
Gate-Drain Charge
3
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 240V, I
D
= 5 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
10
ns
t
f
Fall Time
7
ns
t
c
Cross-over Time
15
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
4
A
I
SDM
(2)
Source-drain Current (pulsed)
16
A
V
SD
(1)
Forward On Voltage
I
SD
= 4 A, V
GS
= 0
1.5
V
t
rr
Reverse Recovery Time
I
SD
= 5 A, di/dt = 100A/s,
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
180
ns
Q
rr
Reverse Recovery Charge
800
nC
I
RRM
Reverse Recovery Current
9
A
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220
STP4NB30/STP4NB30FP
4/9
Thermal Impedance for TO-220
Thermal Impedance for TO-220FP
Tranfer Characteristics
Output Characteristics
Tranconductance
Static Drain-Source On Resistance
5/9
STP4NB30/STP4NB30FP
Capacitance Variations
Gate Charge vs Gate-source Voltage
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
STP4NB30/STP4NB30FP
6/9
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
7/9
STP4NB30/STP4NB30FP
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP4NB30/STP4NB30FP
8/9
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
TO-220FP MECHANICAL DATA
9/9
STP4NB30/STP4NB30FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
2001 STMicroelectronics Printed in Italy All Rights Reserved
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