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Электронный компонент: STP4NC60FP

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1/10
April 2003
STP4NC60 - STP4NC60FP
STB4NC60-1
N-CHANNEL 600V - 1.8
- 4.2A TO-220/TO-220FP/I
2
PAK
PowerMeshTMII MOSFET
(*)Limited only by maximum Temperature allowed
s
TYPICAL R
DS
(on) = 1.8
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
TM
II is the evolution of the first
generation of MESH OVERLAY
TM.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
(1)I
SD
4.2A, di/dt
300A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
TYPE
V
DSS
R
DS(on)
I
D
STP4NC60
STP4NC60FP
STB4NC60-1
600V
600V
600V
< 2.2
< 2.2
< 2.2
4.2A
4.2A
4.2A
Symbol
Parameter
Value
Unit
STP(B)4NC60(-1)
STP4NC60FP
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
4.2
4.2(*)
A
I
D
Drain Current (continuos) at T
C
= 100C
2.6
2.6(*)
A
I
DM
( )
Drain Current (pulsed)
16.8
16.8(*)
A
P
TOT
Total Dissipation at T
C
= 25C
100
35
W
Derating Factor
0.8
0.28
W/C
dv/dt(1)
Peak Diode Recovery voltage slope
3.5
3.5
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
TO-220
1
2
3
TO-220FP
1
2
3
I
2
PAK
(Tabless TO-220)
STP4NC60/FP/STB4NC60-1
2/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
TO-220/I
2
PAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.25
3.57
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
4.2
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
250
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
=1.5 A
1.8
2.2
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 2A
3.7
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
475
pF
C
oss
Output Capacitance
72
pF
C
rss
Reverse Transfer
Capacitance
10
pF
3/10
STP4NC60/FP/STB4NC60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 300V, I
D
= 2A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
14
ns
t
r
Rise Time
14
ns
Q
g
Total Gate Charge
V
DD
= 480V, I
D
= 4A,
V
GS
= 10V
16.5
23.1
nC
Q
gs
Gate-Source Charge
2.5
nC
Q
gd
Gate-Drain Charge
9
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 480V, I
D
= 4A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
15
ns
t
f
Fall Time
19
ns
t
c
Cross-over Time
24
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
4.2
A
I
SDM
(2)
Source-drain Current (pulsed)
16.8
A
V
SD
(1)
Forward On Voltage
I
SD
= 4.2A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 4A, di/dt = 100A/s,
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
600
ns
Q
rr
Reverse Recovery Charge
2.7
C
I
RRM
Reverse Recovery Current
9
A
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220 / I
2
PAK
STP4NC60/FP/STB4NC60-1
4/10
Static Drain-source On Resistance
Transconductance
Thermal Impedance for To-220 / IPAK
Output Characteristics
Thermal Impedance for TO-220FP
Transfer Characteristics
5/10
STP4NC60/FP/STB4NC60-1
Source-drain Diode Forward Characteristics
Capacitance Variations
Gate Charge vs Gate-source Voltage
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
STP4NC60/FP/STB4NC60-1
6/10
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
7/10
STP4NC60/FP/STB4NC60-1
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP4NC60/FP/STB4NC60-1
8/10
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.5
0.045
0.067
F2
1.15
1.5
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
TO-220FP MECHANICAL DATA
9/10
STP4NC60/FP/STB4NC60-1
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
L
L1
B2
B
D
E
A
C2
C
A1
L2
e
P011P5/E
TO-262 (I
2
PAK) MECHANICAL DATA
STP4NC60/FP/STB4NC60-1
10/10
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